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30NF20-VB TO247 Product details
Back to previous pageProduct introduction：
1. Product Introduction
30NF20-VB is a single N-channel MOSFET in TO247 package. It is designed for high voltage and high power applications, with a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V. Through advanced trench technology, this MOSFET has a low on-resistance (RDS(ON)), which is 56mΩ at a gate drive voltage of 10V, allowing it to maintain low conduction losses in high power applications.
30NF20-VB is a single N-channel MOSFET in TO247 package. It is designed for high voltage and high power applications, with a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V. Through advanced trench technology, this MOSFET has a low on-resistance (RDS(ON)), which is 56mΩ at a gate drive voltage of 10V, allowing it to maintain low conduction losses in high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 3V | 35A | 56(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 3V | 35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 3V | 35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 56mΩ @ VGS = 10V
- **Drain current (ID)**: 35A
- **Technology**: Trench
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 56mΩ @ VGS = 10V
- **Drain current (ID)**: 35A
- **Technology**: Trench
Domain and module applications：
III. Application fields and module examples
1. **Power switch**:
30NF20-VB can be used in high-power power switch systems such as high-voltage switching power supplies and inverters. Its high drain-source voltage and on-current capability make it an ideal choice for high-performance power switches.
2. **Industrial control**:
In industrial control systems, this MOSFET can be used in high-voltage switching circuits, motor control, etc. Its stable and reliable performance helps improve the efficiency and reliability of industrial equipment.
3. **Electric vehicle charging pile**:
In electric vehicle charging piles, this MOSFET can be used for switch control of high-voltage DC charging piles. Its high drain-source voltage and low on-resistance help improve charging efficiency and stability.
4. **Solar inverter**:
In solar inverters, 30NF20-VB can be used to control the switching circuit of the inverter. Its high voltage withstand capability and low on-resistance help improve the efficiency and stability of the inverter.
In summary, 30NF20-VB is a high-performance N-channel MOSFET suitable for high-voltage, high-power applications. It is suitable for various high-power electronic applications that require high voltage, high current and high efficiency.
1. **Power switch**:
30NF20-VB can be used in high-power power switch systems such as high-voltage switching power supplies and inverters. Its high drain-source voltage and on-current capability make it an ideal choice for high-performance power switches.
2. **Industrial control**:
In industrial control systems, this MOSFET can be used in high-voltage switching circuits, motor control, etc. Its stable and reliable performance helps improve the efficiency and reliability of industrial equipment.
3. **Electric vehicle charging pile**:
In electric vehicle charging piles, this MOSFET can be used for switch control of high-voltage DC charging piles. Its high drain-source voltage and low on-resistance help improve charging efficiency and stability.
4. **Solar inverter**:
In solar inverters, 30NF20-VB can be used to control the switching circuit of the inverter. Its high voltage withstand capability and low on-resistance help improve the efficiency and stability of the inverter.
In summary, 30NF20-VB is a high-performance N-channel MOSFET suitable for high-voltage, high-power applications. It is suitable for various high-power electronic applications that require high voltage, high current and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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