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30N65M5-VB TO247 Product details
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Product Introduction Details
**30N65M5-VB** is a single N-channel MOSFET produced by VBsemi in TO247 package. The device has high VDS and VGS values and is suitable for a variety of high-power applications. With its advanced SJ_Multi-EPI technology, this MOSFET excels in on-resistance and current handling capability, and is particularly suitable for circuit designs that require high voltage and high current.
**30N65M5-VB** is a single N-channel MOSFET produced by VBsemi in TO247 package. The device has high VDS and VGS values and is suitable for a variety of high-power applications. With its advanced SJ_Multi-EPI technology, this MOSFET excels in on-resistance and current handling capability, and is particularly suitable for circuit designs that require high voltage and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 47A | 80(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
| Parameter| Value| Unit| Remarks|
| ---- | ---- | ---- | ---- | ---- |
| Package type| TO247 | - | High power package|
| Configuration| Single N-channel| - | - |
| Drain-source voltage (VDS) | 700 | V | Max.|
| Gate-source voltage (VGS) | ±30 | V | Max.|
| Threshold voltage (Vth) | 3.5 | V | Typ.|
| On-resistance (RDS(ON)) @ VGS=10V | 80 | mΩ | Max.|
| Drain current (ID) | 47 | A | Max.|
| Technology| SJ_Multi-EPI | - | - |
| Parameter| Value| Unit| Remarks|
| ---- | ---- | ---- | ---- | ---- |
| Package type| TO247 | - | High power package|
| Configuration| Single N-channel| - | - |
| Drain-source voltage (VDS) | 700 | V | Max.|
| Gate-source voltage (VGS) | ±30 | V | Max.|
| Threshold voltage (Vth) | 3.5 | V | Typ.|
| On-resistance (RDS(ON)) @ VGS=10V | 80 | mΩ | Max.|
| Drain current (ID) | 47 | A | Max.|
| Technology| SJ_Multi-EPI | - | - |
Domain and module applications：
Application fields and modules
**30N65M5-VB** MOSFET has a wide range of applications, especially suitable for the following fields and modules:
1. **Power system**
- **Power converter**: Due to its high drain-source voltage and low on-resistance, 30N65M5-VB is very suitable for use as a switching device in power converters, and can work stably at high voltage and high power.
- **Inverter**: In the inverter circuit, this MOSFET can be used to control the conversion of power supply, which is suitable for application scenarios requiring high efficiency and stability.
2. **Industrial control**
- **High voltage power supply**: In the high voltage power supply module of industrial equipment, 30N65M5-VB can be used as a switching element to provide stable current and voltage control.
- **Motor drive**: In the industrial motor control system, this MOSFET can be used to control the start and stop and speed regulation of the motor, which is suitable for high power and high efficiency motor control.
3. **Electric Vehicle Charger**
- **Fast Charger**: In electric vehicle chargers, 30N65M5-VB can be used as a power switching device to support fast charging and improve charging efficiency.
4. **Solar Inverter**
- **Solar Inverter**: In solar inverters, this MOSFET can be used to control the conversion of energy and provide efficient solar power conversion.
In general, 30N65M5-VB is suitable for a variety of electronic products and systems that require high power and high reliability due to its high voltage, high current and low on-resistance characteristics.
**30N65M5-VB** MOSFET has a wide range of applications, especially suitable for the following fields and modules:
1. **Power system**
- **Power converter**: Due to its high drain-source voltage and low on-resistance, 30N65M5-VB is very suitable for use as a switching device in power converters, and can work stably at high voltage and high power.
- **Inverter**: In the inverter circuit, this MOSFET can be used to control the conversion of power supply, which is suitable for application scenarios requiring high efficiency and stability.
2. **Industrial control**
- **High voltage power supply**: In the high voltage power supply module of industrial equipment, 30N65M5-VB can be used as a switching element to provide stable current and voltage control.
- **Motor drive**: In the industrial motor control system, this MOSFET can be used to control the start and stop and speed regulation of the motor, which is suitable for high power and high efficiency motor control.
3. **Electric Vehicle Charger**
- **Fast Charger**: In electric vehicle chargers, 30N65M5-VB can be used as a power switching device to support fast charging and improve charging efficiency.
4. **Solar Inverter**
- **Solar Inverter**: In solar inverters, this MOSFET can be used to control the conversion of energy and provide efficient solar power conversion.
In general, 30N65M5-VB is suitable for a variety of electronic products and systems that require high power and high reliability due to its high voltage, high current and low on-resistance characteristics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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