中文
English
30N10F7-VB Product details
Back to previous pageProduct introduction：
Product Introduction
30N10F7-VB is a single N-channel power MOSFET produced by VBsemi in a TO-220F package. The device has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, and a continuous drain current (ID) of 50A. Using trench technology, the 30N10F7-VB has excellent conduction characteristics and high current handling capabilities, suitable for a variety of high-power applications.
30N10F7-VB is a single N-channel power MOSFET produced by VBsemi in a TO-220F package. The device has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, and a continuous drain current (ID) of 50A. Using trench technology, the 30N10F7-VB has excellent conduction characteristics and high current handling capabilities, suitable for a variety of high-power applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | 34(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: 30N10F7-VB
- **Package type**: TO-220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 34mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 50A
- **Technology**: Trench
- **Model**: 30N10F7-VB
- **Package type**: TO-220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 34mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 50A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
30N10F7-VB MOSFET is suitable for a variety of high-power applications, including but not limited to:
1. **Power converter**:
- In high-efficiency DC-DC converters and AC-DC inverters, the low on-resistance and high current capability of 30N10F7-VB can significantly improve energy conversion efficiency and reduce power loss.
2. **Electric vehicle drive**:
- In the motor drive and power management system of electric vehicles, 30N10F7-VB can provide stable and reliable high-power control to ensure efficient and safe vehicle operation.
3. **Industrial control equipment**:
- In industrial automation and control equipment, 30N10F7-VB can be used in applications such as motor drive and load switch to provide efficient and reliable power control and management.
4. **Solar and Wind Power Generation Systems**:
- In renewable energy power generation systems, 30N10F7-VB can be used in inverters and power converters to optimize energy conversion efficiency and ensure system stability and efficient operation.
5. **Uninterruptible Power Supply (UPS)**:
- In UPS systems, 30N10F7-VB can be used for efficient power switching and battery management to ensure stable backup power when the grid is out of power.
In general, 30N10F7-VB is an excellent high-power MOSFET suitable for a variety of applications that require high current handling and low power consumption, which can improve system efficiency and reliability.
30N10F7-VB MOSFET is suitable for a variety of high-power applications, including but not limited to:
1. **Power converter**:
- In high-efficiency DC-DC converters and AC-DC inverters, the low on-resistance and high current capability of 30N10F7-VB can significantly improve energy conversion efficiency and reduce power loss.
2. **Electric vehicle drive**:
- In the motor drive and power management system of electric vehicles, 30N10F7-VB can provide stable and reliable high-power control to ensure efficient and safe vehicle operation.
3. **Industrial control equipment**:
- In industrial automation and control equipment, 30N10F7-VB can be used in applications such as motor drive and load switch to provide efficient and reliable power control and management.
4. **Solar and Wind Power Generation Systems**:
- In renewable energy power generation systems, 30N10F7-VB can be used in inverters and power converters to optimize energy conversion efficiency and ensure system stability and efficient operation.
5. **Uninterruptible Power Supply (UPS)**:
- In UPS systems, 30N10F7-VB can be used for efficient power switching and battery management to ensure stable backup power when the grid is out of power.
In general, 30N10F7-VB is an excellent high-power MOSFET suitable for a variety of applications that require high current handling and low power consumption, which can improve system efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
