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30N03B-VB TO251 Product details
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Product Introduction
30N03B-VB is a single N-channel power MOSFET produced by VBsemi in a TO-251 package. The device has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, and a continuous drain current (ID) of 50A. Using trench technology, the 30N03B-VB has excellent conduction characteristics and stability, suitable for high-power applications.
30N03B-VB is a single N-channel power MOSFET produced by VBsemi in a TO-251 package. The device has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, and a continuous drain current (ID) of 50A. Using trench technology, the 30N03B-VB has excellent conduction characteristics and stability, suitable for high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | 9(mΩ) | 7(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: 30N03B-VB
- **Package type**: TO-251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 50A
- **Technology**: Trench
- **Model**: 30N03B-VB
- **Package type**: TO-251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 50A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
30N03B-VB MOSFET is suitable for a variety of high-power applications, including but not limited to:
1. **Power converter**:
- In various power converters, such as DC-DC converters and AC-DC inverters, the low on-resistance and high current capability of 30N03B-VB can improve conversion efficiency and power density.
2. **Electric vehicle drive**:
- In the motor drive system of electric vehicles, 30N03B-VB can provide efficient and reliable motor control.
3. **Industrial electronics**:
- In industrial equipment, such as motor control, power management, etc., 30N03B-VB can provide efficient power control.
4. **Power management**:
- In occasions requiring high power management, such as server power supply, industrial control power supply, etc., 30N03B-VB can provide stable and reliable power switch control.
In general, 30N03B-VB is a power MOSFET suitable for high-power applications. It has stable and reliable characteristics and can meet the needs of a variety of high-power applications.
30N03B-VB MOSFET is suitable for a variety of high-power applications, including but not limited to:
1. **Power converter**:
- In various power converters, such as DC-DC converters and AC-DC inverters, the low on-resistance and high current capability of 30N03B-VB can improve conversion efficiency and power density.
2. **Electric vehicle drive**:
- In the motor drive system of electric vehicles, 30N03B-VB can provide efficient and reliable motor control.
3. **Industrial electronics**:
- In industrial equipment, such as motor control, power management, etc., 30N03B-VB can provide efficient power control.
4. **Power management**:
- In occasions requiring high power management, such as server power supply, industrial control power supply, etc., 30N03B-VB can provide stable and reliable power switch control.
In general, 30N03B-VB is a power MOSFET suitable for high-power applications. It has stable and reliable characteristics and can meet the needs of a variety of high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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