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2STS8216-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**2STS8216-VB** is a dual N+N channel power MOSFET produced by VBsemi in SOT23-6 package. It is suitable for various low voltage and high efficiency power management applications, especially where high switching frequency and low on resistance are required. The MOSFET has a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±20V, and is manufactured using advanced trench technology, with excellent low voltage performance.
**2STS8216-VB** is a dual N+N channel power MOSFET produced by VBsemi in SOT23-6 package. It is suitable for various low voltage and high efficiency power management applications, especially where high switching frequency and low on resistance are required. The MOSFET has a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±20V, and is manufactured using advanced trench technology, with excellent low voltage performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28(mΩ) | 24(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
2. Detailed parameter description
- **Model**: 2STS8216-VB
- **Package**: SOT23-6
- **Type**: Dual N+N channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**: 28mΩ @ VGS=2.5V, 24mΩ @ VGS=4.5V
- **Drain current (ID)**: 6A
- **Technology**: Trench technology
- **Model**: 2STS8216-VB
- **Package**: SOT23-6
- **Type**: Dual N+N channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**: 28mΩ @ VGS=2.5V, 24mΩ @ VGS=4.5V
- **Drain current (ID)**: 6A
- **Technology**: Trench technology
Domain and module applications：
3. Applicable fields and modules
**2STS8216-VB** is applicable to the following fields and modules:
1. **Low-voltage power management module**:
- **Mobile device charging management**: Due to its low-voltage performance and high-efficiency characteristics, 2STS8216-VB is suitable for power management modules of mobile devices, such as charging management circuits of smartphones and tablets.
2. **Low-voltage power switch**:
- **Low-voltage power switch**: In low-voltage power switches, 2STS8216-VB can provide fast switching speed and low on-resistance, which helps improve system efficiency and performance.
3. **Consumer electronics**:
- **Handheld devices**: In handheld devices, 2STS8216-VB can be used in battery management circuits to improve battery charging and discharging efficiency and extend battery life.
- **Smart home devices**: In smart home devices, 2STS8216-VB can be used in power management modules to improve the energy efficiency and stability of the devices.
4. **Medical devices**:
- **Portable medical devices**: In portable medical devices, 2STS8216-VB can be used in power management circuits to ensure stable operation and high efficiency of the devices.
Through these application examples, 2STS8216-VB demonstrates its wide application potential in the field of low-voltage and high-efficiency power management, which can meet the needs of various different environments.
**2STS8216-VB** is applicable to the following fields and modules:
1. **Low-voltage power management module**:
- **Mobile device charging management**: Due to its low-voltage performance and high-efficiency characteristics, 2STS8216-VB is suitable for power management modules of mobile devices, such as charging management circuits of smartphones and tablets.
2. **Low-voltage power switch**:
- **Low-voltage power switch**: In low-voltage power switches, 2STS8216-VB can provide fast switching speed and low on-resistance, which helps improve system efficiency and performance.
3. **Consumer electronics**:
- **Handheld devices**: In handheld devices, 2STS8216-VB can be used in battery management circuits to improve battery charging and discharging efficiency and extend battery life.
- **Smart home devices**: In smart home devices, 2STS8216-VB can be used in power management modules to improve the energy efficiency and stability of the devices.
4. **Medical devices**:
- **Portable medical devices**: In portable medical devices, 2STS8216-VB can be used in power management circuits to ensure stable operation and high efficiency of the devices.
Through these application examples, 2STS8216-VB demonstrates its wide application potential in the field of low-voltage and high-efficiency power management, which can meet the needs of various different environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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