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2SK960-MR-VB Product details
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2SK960-MR-VB MOSFET Product Introduction
**Model:** 2SK960-MR-VB
**Package:** TO220F
**Configuration:** Single N-channel
**Technology:** Plannar
2SK960-MR-VB is a high voltage N-channel MOSFET suitable for applications that need to withstand high voltage and medium current. Its drain-source voltage is up to 950V, suitable for use in various power electronic systems. The TO220F package provides good heat dissipation and reliability, suitable for applications under various environmental conditions.
**Model:** 2SK960-MR-VB
**Package:** TO220F
**Configuration:** Single N-channel
**Technology:** Plannar
2SK960-MR-VB is a high voltage N-channel MOSFET suitable for applications that need to withstand high voltage and medium current. Its drain-source voltage is up to 950V, suitable for use in various power electronic systems. The TO220F package provides good heat dissipation and reliability, suitable for applications under various environmental conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | 2400(mΩ) | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2SK960-MR-VB MOSFET Detailed parameters
- **VDS (drain-source voltage):** 950V
- **VGS (gate-source voltage):** ±30V
- **Vth (threshold voltage):** 3.5V
- **RDS(ON) (on-resistance):** 2400mΩ @ VGS = 10V
- **ID (drain current):** 6A
- **Package type:** TO220F
- **Technology:** Plannar
- **VDS (drain-source voltage):** 950V
- **VGS (gate-source voltage):** ±30V
- **Vth (threshold voltage):** 3.5V
- **RDS(ON) (on-resistance):** 2400mΩ @ VGS = 10V
- **ID (drain current):** 6A
- **Package type:** TO220F
- **Technology:** Plannar
Domain and module applications：
Application fields and module examples of 2SK960-MR-VB
Application fields
1. **Power conversion system:**
2SK960-MR-VB can be used in various power conversion systems that require high voltage and medium current handling capabilities, such as inverters, frequency converters, and power factor correctors. Its excellent performance can ensure efficient and stable operation of the system.
2. **Industrial control:**
In industrial control systems, 2SK960-MR-VB can be used in high-voltage switching power supplies and motor controllers to ensure stable and reliable operation of the system.
3. **Power management system:**
2SK960-MR-VB can be used in various power management systems, such as switching power supplies and voltage regulators. Its high voltage and medium current handling capabilities make it an ideal choice for these systems.
Module Examples
1. **Inverter Module:**
2SK960-MR-VB can be used in various inverter modules, such as those used in solar and wind energy systems. Its high voltage and current handling capabilities make it an important component in these modules.
2. **Frequency Converter Module:**
Frequency converters are widely used in industrial drive systems. 2SK960-MR-VB can be used as a key component of the frequency converter module to ensure efficient and stable operation of the system.
3. **Power Factor Correction Module:**
In the power factor corrector, 2SK960-MR-VB can be used as a switching device to help adjust the power factor of the circuit and improve energy utilization.
In summary, as a high-voltage N-channel MOSFET, 2SK960-MR-VB can play an important role in various applications that require high voltage and medium current handling capabilities. It is particularly suitable for power management systems and power electronic systems that require high efficiency and high reliability.
Application fields
1. **Power conversion system:**
2SK960-MR-VB can be used in various power conversion systems that require high voltage and medium current handling capabilities, such as inverters, frequency converters, and power factor correctors. Its excellent performance can ensure efficient and stable operation of the system.
2. **Industrial control:**
In industrial control systems, 2SK960-MR-VB can be used in high-voltage switching power supplies and motor controllers to ensure stable and reliable operation of the system.
3. **Power management system:**
2SK960-MR-VB can be used in various power management systems, such as switching power supplies and voltage regulators. Its high voltage and medium current handling capabilities make it an ideal choice for these systems.
Module Examples
1. **Inverter Module:**
2SK960-MR-VB can be used in various inverter modules, such as those used in solar and wind energy systems. Its high voltage and current handling capabilities make it an important component in these modules.
2. **Frequency Converter Module:**
Frequency converters are widely used in industrial drive systems. 2SK960-MR-VB can be used as a key component of the frequency converter module to ensure efficient and stable operation of the system.
3. **Power Factor Correction Module:**
In the power factor corrector, 2SK960-MR-VB can be used as a switching device to help adjust the power factor of the circuit and improve energy utilization.
In summary, as a high-voltage N-channel MOSFET, 2SK960-MR-VB can play an important role in various applications that require high voltage and medium current handling capabilities. It is particularly suitable for power management systems and power electronic systems that require high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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