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2SK949-MR-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**Product Model**: 2SK949-MR-VB
**Package Type**: TO220F
**Product Overview**: 2SK949-MR-VB is a single N-channel MOSFET that uses Plannar technology and has high voltage capability and stability. The device is suitable for high voltage applications such as power management and power amplification.
**Product Model**: 2SK949-MR-VB
**Package Type**: TO220F
**Product Overview**: 2SK949-MR-VB is a single N-channel MOSFET that uses Plannar technology and has high voltage capability and stability. The device is suitable for high voltage applications such as power management and power amplification.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100(mΩ) | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology type**: Plannar
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology type**: Plannar
Domain and module applications：
3. Application fields and module examples
**Fields:**
1. **Power management**: 2SK949-MR-VB can be used in high-voltage power management applications such as switching power supplies and inverters.
2. **Power amplifier**: In high-voltage power amplifier circuits, the device can provide stable power output.
**Modules:**
1. **Switching power supply**: In high-voltage switching power supplies, 2SK949-MR-VB can be used as a power switching element to achieve efficient power conversion.
2. **Inverter**: In inverters, it provides stable and high power output, suitable for solar and wind energy conversion systems.
In summary, 2SK949-MR-VB MOSFET has high-voltage handling capabilities and stability, suitable for various high-voltage electronic systems, and improves the efficiency and reliability of the system.
**Fields:**
1. **Power management**: 2SK949-MR-VB can be used in high-voltage power management applications such as switching power supplies and inverters.
2. **Power amplifier**: In high-voltage power amplifier circuits, the device can provide stable power output.
**Modules:**
1. **Switching power supply**: In high-voltage switching power supplies, 2SK949-MR-VB can be used as a power switching element to achieve efficient power conversion.
2. **Inverter**: In inverters, it provides stable and high power output, suitable for solar and wind energy conversion systems.
In summary, 2SK949-MR-VB MOSFET has high-voltage handling capabilities and stability, suitable for various high-voltage electronic systems, and improves the efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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