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2SK897-MR-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
2SK897-MR-VB is a single N-channel MOSFET in TO220F package. It is designed for high voltage and high power applications, with a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, suitable for switching and amplification circuits requiring high voltage and high current. Through planar technology, this MOSFET has a low on-resistance (RDS(ON)), which is 1100mΩ at a gate drive voltage of 10V, allowing it to maintain low conduction losses in high voltage applications.
2SK897-MR-VB is a single N-channel MOSFET in TO220F package. It is designed for high voltage and high power applications, with a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, suitable for switching and amplification circuits requiring high voltage and high current. Through planar technology, this MOSFET has a low on-resistance (RDS(ON)), which is 1100mΩ at a gate drive voltage of 10V, allowing it to maintain low conduction losses in high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100(mΩ) | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Drain current (ID)**: 7A
- **Technology**: Plannar
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Drain current (ID)**: 7A
- **Technology**: Plannar
Domain and module applications：
III. Application fields and module examples
1. **Power switch**:
2SK897-MR-VB can be used for high-voltage power switches, such as switching power supplies, inverters, etc. Its high drain-source voltage and on-current capability make it an ideal choice for high-performance power switches.
2. **Electric vehicle charging pile**:
In electric vehicle charging piles, this MOSFET can be used for switch control of high-voltage DC charging piles. Its high drain-source voltage and low on-resistance help improve charging efficiency and stability.
3. **Industrial high-voltage application**:
2SK897-MR-VB is suitable for industrial high-voltage switching circuits, such as high-voltage motor drives, high-voltage power supplies, etc. Its stable and reliable performance helps improve the efficiency and reliability of industrial equipment.
4. **Lighting system**:
In LED lighting systems that require high voltage, this MOSFET can be used for switch control of LED drivers. Its high on-current and low on-resistance help improve the efficiency and stability of LED lighting.
In summary, 2SK897-MR-VB is a high-performance N-channel MOSFET suitable for various high-voltage electronic applications that require high voltage, high current and high efficiency.
1. **Power switch**:
2SK897-MR-VB can be used for high-voltage power switches, such as switching power supplies, inverters, etc. Its high drain-source voltage and on-current capability make it an ideal choice for high-performance power switches.
2. **Electric vehicle charging pile**:
In electric vehicle charging piles, this MOSFET can be used for switch control of high-voltage DC charging piles. Its high drain-source voltage and low on-resistance help improve charging efficiency and stability.
3. **Industrial high-voltage application**:
2SK897-MR-VB is suitable for industrial high-voltage switching circuits, such as high-voltage motor drives, high-voltage power supplies, etc. Its stable and reliable performance helps improve the efficiency and reliability of industrial equipment.
4. **Lighting system**:
In LED lighting systems that require high voltage, this MOSFET can be used for switch control of LED drivers. Its high on-current and low on-resistance help improve the efficiency and stability of LED lighting.
In summary, 2SK897-MR-VB is a high-performance N-channel MOSFET suitable for various high-voltage electronic applications that require high voltage, high current and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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