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2SK801-Z-T2-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
2SK801-Z-T2-VB is a single N-channel MOSFET in TO252 package. It is designed for high power applications, with a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, suitable for switching and amplification circuits that require high voltage and high current. Through advanced trench technology, this MOSFET has an extremely low on-resistance (RDS(ON)), which is 9mΩ and 7mΩ at a gate drive voltage of 4.5V and 10V respectively, allowing it to maintain extremely low conduction losses in high power applications.
2SK801-Z-T2-VB is a single N-channel MOSFET in TO252 package. It is designed for high power applications, with a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, suitable for switching and amplification circuits that require high voltage and high current. Through advanced trench technology, this MOSFET has an extremely low on-resistance (RDS(ON)), which is 9mΩ and 7mΩ at a gate drive voltage of 4.5V and 10V respectively, allowing it to maintain extremely low conduction losses in high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 9(mΩ) | 7(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 9mΩ @ VGS = 4.5V; 7mΩ @ VGS = 10V
- **Drain current (ID)**: 70A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 9mΩ @ VGS = 4.5V; 7mΩ @ VGS = 10V
- **Drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
3. Application fields and module examples
1. **Power management**:
2SK801-Z-T2-VB is suitable for high-power power management systems, such as server power supplies, industrial control power supplies, etc. Its low on-resistance and high drain current capability make it an ideal choice for high-efficiency power controllers.
2. **Motor drive**:
In motor drive applications, this MOSFET can be used to control the start, stop and speed regulation of high-power motors. Its high drain current and low on-resistance ensure high efficiency and reliability of motor drive.
3. **Automotive electronics**:
In automotive electronic systems, 2SK801-Z-T2-VB can be used for on-board power management, motor control, etc. Its high withstand voltage and high on-current capability enable it to cope with various working conditions of automotive electronic systems.
4. **Industrial control**:
This MOSFET is suitable for high-power switching circuits, motor control, etc. in industrial control systems. Its high drain-source voltage and on-current capability help improve the efficiency and reliability of industrial equipment.
In summary, 2SK801-Z-T2-VB is a high-performance N-channel MOSFET suitable for a variety of electronic applications requiring high voltage, high current and high efficiency.
1. **Power management**:
2SK801-Z-T2-VB is suitable for high-power power management systems, such as server power supplies, industrial control power supplies, etc. Its low on-resistance and high drain current capability make it an ideal choice for high-efficiency power controllers.
2. **Motor drive**:
In motor drive applications, this MOSFET can be used to control the start, stop and speed regulation of high-power motors. Its high drain current and low on-resistance ensure high efficiency and reliability of motor drive.
3. **Automotive electronics**:
In automotive electronic systems, 2SK801-Z-T2-VB can be used for on-board power management, motor control, etc. Its high withstand voltage and high on-current capability enable it to cope with various working conditions of automotive electronic systems.
4. **Industrial control**:
This MOSFET is suitable for high-power switching circuits, motor control, etc. in industrial control systems. Its high drain-source voltage and on-current capability help improve the efficiency and reliability of industrial equipment.
In summary, 2SK801-Z-T2-VB is a high-performance N-channel MOSFET suitable for a variety of electronic applications requiring high voltage, high current and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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