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2SK654-Z-E1-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
2SK654-Z-E1-VB is a single N-channel MOSFET in TO252 package. It is designed for high power applications, with a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, suitable for switching and amplification circuits that require high voltage and high current. Through advanced trench technology, this MOSFET has a low on-resistance (RDS(ON)), which is 114mΩ at a gate drive voltage of 10V, allowing it to maintain low conduction losses in high power applications.
2SK654-Z-E1-VB is a single N-channel MOSFET in TO252 package. It is designed for high power applications, with a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, suitable for switching and amplification circuits that require high voltage and high current. Through advanced trench technology, this MOSFET has a low on-resistance (RDS(ON)), which is 114mΩ at a gate drive voltage of 10V, allowing it to maintain low conduction losses in high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ @ VGS = 10V
- **Drain current (ID)**: 15A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ @ VGS = 10V
- **Drain current (ID)**: 15A
- **Technology**: Trench
Domain and module applications：
III. Application fields and module examples
1. **Power management**:
2SK654-Z-E1-VB is suitable for various power management systems, such as switching power supplies, DC-DC converters, etc. Its high drain-source voltage and on-current capability make it a stable and reliable power controller.
2. **Automotive electronics**:
In automotive electronic systems, this MOSFET can be used for on-board power management, lighting control, etc. Its high withstand voltage and high on-current capability enable it to cope with various working conditions of automotive electronic systems.
3. **Industrial control**:
2SK654-Z-E1-VB is suitable for switching circuits, motor control, etc. in industrial control systems. Its high on-state capability and stable performance help improve the efficiency and reliability of industrial equipment.
4. **Motor drive**:
In motor drive applications, this MOSFET can be used to control the start, stop and speed regulation of the motor. Its low on-resistance and high drain-source voltage make it an ideal choice for motor drives.
In summary, the 2SK654-Z-E1-VB is a high-performance N-channel MOSFET suitable for a variety of electronic applications that require high voltage, high current and high efficiency.
1. **Power management**:
2SK654-Z-E1-VB is suitable for various power management systems, such as switching power supplies, DC-DC converters, etc. Its high drain-source voltage and on-current capability make it a stable and reliable power controller.
2. **Automotive electronics**:
In automotive electronic systems, this MOSFET can be used for on-board power management, lighting control, etc. Its high withstand voltage and high on-current capability enable it to cope with various working conditions of automotive electronic systems.
3. **Industrial control**:
2SK654-Z-E1-VB is suitable for switching circuits, motor control, etc. in industrial control systems. Its high on-state capability and stable performance help improve the efficiency and reliability of industrial equipment.
4. **Motor drive**:
In motor drive applications, this MOSFET can be used to control the start, stop and speed regulation of the motor. Its low on-resistance and high drain-source voltage make it an ideal choice for motor drives.
In summary, the 2SK654-Z-E1-VB is a high-performance N-channel MOSFET suitable for a variety of electronic applications that require high voltage, high current and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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