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2SK4213-E1-AY-VB Product details
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2SK4213-E1-AY-VB MOSFET Product Introduction
2SK4213-E1-AY-VB is a single N-channel MOSFET in TO252 package, suitable for low voltage and high current applications. It adopts Trench technology, has low on-resistance and moderate drain-source voltage, suitable for applications requiring low conduction loss and high current carrying capacity.
2SK4213-E1-AY-VB is a single N-channel MOSFET in TO252 package, suitable for low voltage and high current applications. It adopts Trench technology, has low on-resistance and moderate drain-source voltage, suitable for applications requiring low conduction loss and high current carrying capacity.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 3(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2SK4213-E1-AY-VB MOSFET Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 3mΩ @ VGS = 4.5V, 2mΩ @ VGS = 10V
- **Drain current (ID)**: 100A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 3mΩ @ VGS = 4.5V, 2mΩ @ VGS = 10V
- **Drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **Power management**: 2SK4213-E1-AY-VB can be used in low-voltage, high-current power management modules such as power switches, DC-DC converters, etc., to provide stable voltage output and reduce conduction losses. Its low on-resistance and high current carrying capacity make it an ideal choice for these applications.
2. **Battery protection**: This MOSFET can be used in overvoltage protection modules in battery protection circuits to ensure the stability and safety of battery charging and discharging processes. Its high current carrying capacity is suitable for applications that require transient high currents.
3. **Motor drive**: In motor drives, 2SK4213-E1-AY-VB can be used as a switch in motor control modules, providing high-efficiency energy conversion and stable current control. Its high current carrying capacity is suitable for various motor drive applications.
1. **Power management**: 2SK4213-E1-AY-VB can be used in low-voltage, high-current power management modules such as power switches, DC-DC converters, etc., to provide stable voltage output and reduce conduction losses. Its low on-resistance and high current carrying capacity make it an ideal choice for these applications.
2. **Battery protection**: This MOSFET can be used in overvoltage protection modules in battery protection circuits to ensure the stability and safety of battery charging and discharging processes. Its high current carrying capacity is suitable for applications that require transient high currents.
3. **Motor drive**: In motor drives, 2SK4213-E1-AY-VB can be used as a switch in motor control modules, providing high-efficiency energy conversion and stable current control. Its high current carrying capacity is suitable for various motor drive applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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