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2SK3993-ZK-E2-AY-VB Product details
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Product Introduction
**2SK3993-ZK-E2-AY-VB** is a low voltage N-channel MOSFET launched by VBsemi. This device adopts TO252 package and is suitable for low voltage applications. With extremely low on-resistance and high drain current carrying capacity, it is suitable for power management and power conversion circuits that require efficient energy consumption and high power density.
**2SK3993-ZK-E2-AY-VB** is a low voltage N-channel MOSFET launched by VBsemi. This device adopts TO252 package and is suitable for low voltage applications. With extremely low on-resistance and high drain current carrying capacity, it is suitable for power management and power conversion circuits that require efficient energy consumption and high power density.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | 3.5(mΩ) | 2.5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: 2SK3993-ZK-E2-AY-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 3.5mΩ @ VGS=2.5V
- 2.5mΩ @ VGS=4.5V
- **Drain current (ID)**: 120A
- **Technology**: Trench
- **Model**: 2SK3993-ZK-E2-AY-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 3.5mΩ @ VGS=2.5V
- 2.5mΩ @ VGS=4.5V
- **Drain current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power Management**:
- **Description**: Due to its extremely low on-resistance and high drain current carrying capacity, it is suitable for low-voltage high-power power management modules.
- **Example**: In high-performance power modules or high-power density power converters, this MOSFET can be used as a key power switching element to provide efficient power conversion.
2. **Power Tools**:
- **Description**: Suitable for high-power power tool drive circuits.
- **Example**: In high-performance electric drills or electric hammers, this device can be used to control the start and stop and speed regulation of the motor to provide efficient power output.
3. **Electric Vehicle**:
- **Description**: Due to its high current carrying capacity and low on-resistance, it is suitable for power control modules in electric vehicles.
- **Example**: In electric vehicles or electric motorcycles, this device can be used to control the speed and torque of the motor to achieve efficient power transmission.
4. **Industrial Automation**:
- **Description**: Suitable for high-power switching circuits in industrial control systems.
- **Example**: In PLC controllers or industrial robots, this MOSFET can be used to control the power switches of various high-power devices to improve the reliability and efficiency of the system.
From the above examples, it can be seen that the 2SK3993-ZK-E2-AY-VB MOSFET is suitable for various low-voltage and high-power density applications. It has extremely low on-resistance and high current carrying capacity, and is an ideal choice in power conversion circuits.
1. **Power Management**:
- **Description**: Due to its extremely low on-resistance and high drain current carrying capacity, it is suitable for low-voltage high-power power management modules.
- **Example**: In high-performance power modules or high-power density power converters, this MOSFET can be used as a key power switching element to provide efficient power conversion.
2. **Power Tools**:
- **Description**: Suitable for high-power power tool drive circuits.
- **Example**: In high-performance electric drills or electric hammers, this device can be used to control the start and stop and speed regulation of the motor to provide efficient power output.
3. **Electric Vehicle**:
- **Description**: Due to its high current carrying capacity and low on-resistance, it is suitable for power control modules in electric vehicles.
- **Example**: In electric vehicles or electric motorcycles, this device can be used to control the speed and torque of the motor to achieve efficient power transmission.
4. **Industrial Automation**:
- **Description**: Suitable for high-power switching circuits in industrial control systems.
- **Example**: In PLC controllers or industrial robots, this MOSFET can be used to control the power switches of various high-power devices to improve the reliability and efficiency of the system.
From the above examples, it can be seen that the 2SK3993-ZK-E2-AY-VB MOSFET is suitable for various low-voltage and high-power density applications. It has extremely low on-resistance and high current carrying capacity, and is an ideal choice in power conversion circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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