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2SK3978-TL-E-VB Product details
Back to previous pageProduct introduction：
1. 2SK3978-TL-E-VB Product Introduction
2SK3978-TL-E-VB is a single N-channel MOSFET in TO252 package. The device has a drain-source voltage (VDS) of up to 200V and a continuous drain current (ID) of 10A. Its threshold voltage (Vth) is 3V and its on-resistance (RDS(ON)) is 245mΩ @ VGS = 10V. It adopts Trench technology, has the advantages of low on-resistance and high switching speed, and is suitable for various high-performance power management and conversion fields.
2SK3978-TL-E-VB is a single N-channel MOSFET in TO252 package. The device has a drain-source voltage (VDS) of up to 200V and a continuous drain current (ID) of 10A. Its threshold voltage (Vth) is 3V and its on-resistance (RDS(ON)) is 245mΩ @ VGS = 10V. It adopts Trench technology, has the advantages of low on-resistance and high switching speed, and is suitable for various high-performance power management and conversion fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. 2SK3978-TL-E-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 245mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 10A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 245mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 10A
- **Technology**: Trench
Domain and module applications：
3. Application fields and module examples
**Application fields:**
1. **Power management system**:
2SK3978-TL-E-VB can be used in various high-performance power management systems, such as switching power supplies (SMPS), DC-DC converters, and linear regulators. Its high drain-source voltage and low on-resistance characteristics enable it to provide reliable power conversion and distribution in high-voltage and high-current environments.
2. **Motor drive**:
In industrial automation and electric vehicles, this MOSFET can be used in motor drives for efficient motor control. Its high current carrying capacity and low on-resistance help improve the overall efficiency and performance of the system.
3. **Battery management system**:
In electric vehicles and energy storage systems, this MOSFET can be used in battery management systems (BMS) for efficient battery charge and discharge control and protection. Its high reliability and durability ensure the long life and stable operation of the battery system.
4. **Power Switch**:
Suitable for high-performance power switches, such as power adapters and server power supplies. Its high drain-source voltage and high current carrying capacity help improve the efficiency and reliability of the switch.
5. **LED Lighting**:
Suitable for applications that require high-power LED driving, such as outdoor lighting and industrial lighting. Its low on-resistance and high current carrying capacity help improve the brightness and efficiency of LED lights.
Through the above application fields and module examples, 2SK3978-TL-E-VB demonstrates its wide applicability in various high-performance electronic devices and is an indispensable key component in modern electronic devices.
**Application fields:**
1. **Power management system**:
2SK3978-TL-E-VB can be used in various high-performance power management systems, such as switching power supplies (SMPS), DC-DC converters, and linear regulators. Its high drain-source voltage and low on-resistance characteristics enable it to provide reliable power conversion and distribution in high-voltage and high-current environments.
2. **Motor drive**:
In industrial automation and electric vehicles, this MOSFET can be used in motor drives for efficient motor control. Its high current carrying capacity and low on-resistance help improve the overall efficiency and performance of the system.
3. **Battery management system**:
In electric vehicles and energy storage systems, this MOSFET can be used in battery management systems (BMS) for efficient battery charge and discharge control and protection. Its high reliability and durability ensure the long life and stable operation of the battery system.
4. **Power Switch**:
Suitable for high-performance power switches, such as power adapters and server power supplies. Its high drain-source voltage and high current carrying capacity help improve the efficiency and reliability of the switch.
5. **LED Lighting**:
Suitable for applications that require high-power LED driving, such as outdoor lighting and industrial lighting. Its low on-resistance and high current carrying capacity help improve the brightness and efficiency of LED lights.
Through the above application fields and module examples, 2SK3978-TL-E-VB demonstrates its wide applicability in various high-performance electronic devices and is an indispensable key component in modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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