中文
English
2SK3906-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**2SK3906-VB** is a high-performance N-channel MOSFET launched by VBsemi. This device adopts TO3P package and is suitable for medium and high voltage applications. It has low on-resistance and high drain current carrying capacity, suitable for various power management and power conversion circuits.
**2SK3906-VB** is a high-performance N-channel MOSFET launched by VBsemi. This device adopts TO3P package and is suitable for medium and high voltage applications. It has low on-resistance and high drain current carrying capacity, suitable for various power management and power conversion circuits.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | 190(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Model**: 2SK3906-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Model**: 2SK3906-VB
- **Package**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Electric vehicle charging pile**:
- **Description**: Due to its low on-resistance and high drain current carrying capacity, the 2SK3906-VB is suitable for power switches in electric vehicle charging piles.
- **Example**: In electric vehicle charging piles, the device can be used to control the output power and charging speed of the charging pile, providing efficient and fast charging services.
2. **Industrial power module**:
- **Description**: This MOSFET is suitable for industrial power modules that require higher power density.
- **Example**: In power modules in industrial automation equipment, this device can be used to provide stable power output to ensure the normal operation of the equipment.
3. **Solar inverter**:
- **Description**: Due to its high drain current carrying capacity, the device is suitable for high-power switches in solar inverters.
- **Example**: In the inverter module in the solar power generation system, this MOSFET can be used to achieve efficient conversion from DC to AC and provide reliable power output.
4. **Medical Equipment**:
- **Description**: 2SK3906-VB is suitable for high-power modules in medical equipment.
- **Example**: In medical X-ray machines or MRI equipment, this device can be used to control the stable output of high-power modules to ensure the normal operation of the equipment.
From the above examples, it can be seen that 2SK3906-VB MOSFET is suitable for various medium-voltage and high-power applications, with good performance and reliability, and is an ideal choice in power conversion circuits.
1. **Electric vehicle charging pile**:
- **Description**: Due to its low on-resistance and high drain current carrying capacity, the 2SK3906-VB is suitable for power switches in electric vehicle charging piles.
- **Example**: In electric vehicle charging piles, the device can be used to control the output power and charging speed of the charging pile, providing efficient and fast charging services.
2. **Industrial power module**:
- **Description**: This MOSFET is suitable for industrial power modules that require higher power density.
- **Example**: In power modules in industrial automation equipment, this device can be used to provide stable power output to ensure the normal operation of the equipment.
3. **Solar inverter**:
- **Description**: Due to its high drain current carrying capacity, the device is suitable for high-power switches in solar inverters.
- **Example**: In the inverter module in the solar power generation system, this MOSFET can be used to achieve efficient conversion from DC to AC and provide reliable power output.
4. **Medical Equipment**:
- **Description**: 2SK3906-VB is suitable for high-power modules in medical equipment.
- **Example**: In medical X-ray machines or MRI equipment, this device can be used to control the stable output of high-power modules to ensure the normal operation of the equipment.
From the above examples, it can be seen that 2SK3906-VB MOSFET is suitable for various medium-voltage and high-power applications, with good performance and reliability, and is an ideal choice in power conversion circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
