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2SK3878-VB Product details
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Product Introduction: 2SK3878-VB
2SK3878-VB is a high voltage N-channel MOSFET in TO3P package. It has high drain-source voltage, low on-resistance and moderate current handling capability, suitable for various power electronics applications requiring high withstand voltage and medium current. It is manufactured using SJ_Multi-EPI technology and has high stability and reliability.
2SK3878-VB is a high voltage N-channel MOSFET in TO3P package. It has high drain-source voltage, low on-resistance and moderate current handling capability, suitable for various power electronics applications requiring high withstand voltage and medium current. It is manufactured using SJ_Multi-EPI technology and has high stability and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | 750(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed product parameter description
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS=10V
- **Drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS=10V
- **Drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples
2SK3878-VB is suitable for various power electronic applications that require high voltage and moderate current. Here are some specific application fields and modules:
1. **Power switch**:
- **Switching power supply**: Due to its high withstand voltage and low on-resistance, 2SK3878-VB can be used as a power switching device in a switching power supply, which helps to improve the conversion efficiency and stability of the power supply.
2. **Industrial control system**:
- **High voltage circuit switch**: In industrial control systems, this MOSFET can be used for high voltage circuit switches, such as high voltage drivers and high voltage switch modules, to control the circuits of industrial equipment.
3. **Medical equipment**:
- **X-ray generator**: 2SK3878-VB can be used as a power switch in an X-ray generator to control the emission and stop of X-rays, ensuring the safe and stable operation of medical equipment.
4. **Electric vehicle charging system**:
- **Electric vehicle charging pile**: In the electric vehicle charging system, this MOSFET can be used as a power switch of the charging pile, providing efficient current control, which is suitable for the needs of fast charging of electric vehicles.
In summary, the 2SK3878-VB is a high-voltage N-channel MOSFET suitable for power electronics applications that require high withstand voltage and moderate current, such as switching power supplies, industrial control systems, medical equipment, and electric vehicle charging systems.
2SK3878-VB is suitable for various power electronic applications that require high voltage and moderate current. Here are some specific application fields and modules:
1. **Power switch**:
- **Switching power supply**: Due to its high withstand voltage and low on-resistance, 2SK3878-VB can be used as a power switching device in a switching power supply, which helps to improve the conversion efficiency and stability of the power supply.
2. **Industrial control system**:
- **High voltage circuit switch**: In industrial control systems, this MOSFET can be used for high voltage circuit switches, such as high voltage drivers and high voltage switch modules, to control the circuits of industrial equipment.
3. **Medical equipment**:
- **X-ray generator**: 2SK3878-VB can be used as a power switch in an X-ray generator to control the emission and stop of X-rays, ensuring the safe and stable operation of medical equipment.
4. **Electric vehicle charging system**:
- **Electric vehicle charging pile**: In the electric vehicle charging system, this MOSFET can be used as a power switch of the charging pile, providing efficient current control, which is suitable for the needs of fast charging of electric vehicles.
In summary, the 2SK3878-VB is a high-voltage N-channel MOSFET suitable for power electronics applications that require high withstand voltage and moderate current, such as switching power supplies, industrial control systems, medical equipment, and electric vehicle charging systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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