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2SK3812-ZP-VB Product details
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Product Introduction: 2SK3812-ZP-VB
2SK3812-ZP-VB is a high-performance N-channel MOSFET in TO263 package. The device has low on-resistance, high withstand voltage and high current handling capability, suitable for a variety of high power density and high efficiency power electronics applications. It is manufactured using advanced Trench technology to ensure the reliability and stability of the device in high current and high voltage environments.
2SK3812-ZP-VB is a high-performance N-channel MOSFET in TO263 package. The device has low on-resistance, high withstand voltage and high current handling capability, suitable for a variety of high power density and high efficiency power electronics applications. It is manufactured using advanced Trench technology to ensure the reliability and stability of the device in high current and high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | 12(mΩ) | 3.2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed product parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 3.2mΩ @ VGS=10V
- **Drain current (ID)**: 210A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 3.2mΩ @ VGS=10V
- **Drain current (ID)**: 210A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
2SK3812-ZP-VB is suitable for a variety of high power density and high efficiency power electronics applications. Here are some specific application areas and modules:
1. **Power supply module**:
- **DC-DC converter**: Due to its low on-resistance and high drain current handling capability, 2SK3812-ZP-VB is very suitable for high power density DC-DC converters such as server power supplies, industrial power supplies, and communication equipment power supplies.
2. **Electric vehicle charging system**:
- **Electric vehicle charging pile**: In the electric vehicle charging system, this MOSFET can be used as a power switch for the charging pile, providing efficient current control, suitable for scenarios with fast charging and high power charging requirements.
3. **Industrial automation equipment**:
- **High power driver**: In industrial automation equipment, 2SK3812-ZP-VB can be used as a power switch for high power drivers to help achieve efficient motor control and power transmission.
4. **Lighting system**:
- **LED lighting**: This MOSFET can be used in power switches and dimming controllers in LED lighting systems to provide efficient power conversion and light control.
In summary, the 2SK3812-ZP-VB is a high-performance MOSFET suitable for power electronic systems that require high power density and high efficiency, such as DC-DC converters, electric vehicle charging systems, industrial automation equipment, and LED lighting.
2SK3812-ZP-VB is suitable for a variety of high power density and high efficiency power electronics applications. Here are some specific application areas and modules:
1. **Power supply module**:
- **DC-DC converter**: Due to its low on-resistance and high drain current handling capability, 2SK3812-ZP-VB is very suitable for high power density DC-DC converters such as server power supplies, industrial power supplies, and communication equipment power supplies.
2. **Electric vehicle charging system**:
- **Electric vehicle charging pile**: In the electric vehicle charging system, this MOSFET can be used as a power switch for the charging pile, providing efficient current control, suitable for scenarios with fast charging and high power charging requirements.
3. **Industrial automation equipment**:
- **High power driver**: In industrial automation equipment, 2SK3812-ZP-VB can be used as a power switch for high power drivers to help achieve efficient motor control and power transmission.
4. **Lighting system**:
- **LED lighting**: This MOSFET can be used in power switches and dimming controllers in LED lighting systems to provide efficient power conversion and light control.
In summary, the 2SK3812-ZP-VB is a high-performance MOSFET suitable for power electronic systems that require high power density and high efficiency, such as DC-DC converters, electric vehicle charging systems, industrial automation equipment, and LED lighting.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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