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2SK3799_06-VB Product details
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1. 2SK3799_06-VB Product Introduction
2SK3799_06-VB is a high-performance single N-channel MOSFET in TO220F package. The device has a drain-source voltage (VDS) of up to 900V and a continuous drain current (ID) of 7A. This MOSFET is suitable for a variety of high-voltage applications. With its SJ_Multi-EPI technology, it has the advantages of low on-resistance and high switching speed, making it an ideal choice for efficient power management and conversion.
2SK3799_06-VB is a high-performance single N-channel MOSFET in TO220F package. The device has a drain-source voltage (VDS) of up to 900V and a continuous drain current (ID) of 7A. This MOSFET is suitable for a variety of high-voltage applications. With its SJ_Multi-EPI technology, it has the advantages of low on-resistance and high switching speed, making it an ideal choice for efficient power management and conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 7A | 770(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. 2SK3799_06-VB Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 770mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 770mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
3. Application fields and modules
**Application fields:**
1. **Power management system**:
2SK3799_06-VB is suitable for high-efficiency power management systems, such as switch mode power supplies (SMPS) and uninterruptible power supplies (UPS). Its high drain-source voltage and low on-resistance characteristics enable it to provide reliable power conversion and distribution in high-voltage environments.
2. **Photovoltaic inverter**:
In a photovoltaic inverter, this MOSFET is able to handle the high voltage received from the solar panel and efficiently convert DC power to AC power. Its high switching speed helps improve the efficiency of the inverter and reduce energy losses.
3. **Motor drive**:
2SK3799_06-VB is suitable for motor drive applications that require high voltage and high current control, such as industrial automation equipment and power tools. Its low on-resistance and high current carrying capacity can improve the overall efficiency and performance of the system.
4. **Battery Management System**:
In electric vehicles and energy storage systems, this MOSFET can be used in battery management systems (BMS) to achieve efficient battery charge and discharge control and protection. Its high reliability and durability ensure the long life and stable operation of the battery system.
5. **Lighting Control**:
Suitable for efficient LED drive and lighting control systems. The high switching speed and low energy consumption of this MOSFET help improve the energy efficiency and reliability of LED lighting systems.
Through the above application fields and module examples, 2SK3799_06-VB demonstrates its wide applicability in high-voltage, high-efficiency power electronic equipment, and is an important component of various modern power and electronic equipment.
**Application fields:**
1. **Power management system**:
2SK3799_06-VB is suitable for high-efficiency power management systems, such as switch mode power supplies (SMPS) and uninterruptible power supplies (UPS). Its high drain-source voltage and low on-resistance characteristics enable it to provide reliable power conversion and distribution in high-voltage environments.
2. **Photovoltaic inverter**:
In a photovoltaic inverter, this MOSFET is able to handle the high voltage received from the solar panel and efficiently convert DC power to AC power. Its high switching speed helps improve the efficiency of the inverter and reduce energy losses.
3. **Motor drive**:
2SK3799_06-VB is suitable for motor drive applications that require high voltage and high current control, such as industrial automation equipment and power tools. Its low on-resistance and high current carrying capacity can improve the overall efficiency and performance of the system.
4. **Battery Management System**:
In electric vehicles and energy storage systems, this MOSFET can be used in battery management systems (BMS) to achieve efficient battery charge and discharge control and protection. Its high reliability and durability ensure the long life and stable operation of the battery system.
5. **Lighting Control**:
Suitable for efficient LED drive and lighting control systems. The high switching speed and low energy consumption of this MOSFET help improve the energy efficiency and reliability of LED lighting systems.
Through the above application fields and module examples, 2SK3799_06-VB demonstrates its wide applicability in high-voltage, high-efficiency power electronic equipment, and is an important component of various modern power and electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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