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2SK3699-01MR-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
VBsemi 2SK3699-01MR-VB is a single N-channel power MOSFET with high voltage tolerance and low on-resistance. It adopts TO220F package and is suitable for applications requiring high voltage and medium current. The device adopts planar technology and has good thermal characteristics and stability, which is suitable for circuit design requiring high performance and high reliability.
VBsemi 2SK3699-01MR-VB is a single N-channel power MOSFET with high voltage tolerance and low on-resistance. It adopts TO220F package and is suitable for applications requiring high voltage and medium current. The device adopts planar technology and has good thermal characteristics and stability, which is suitable for circuit design requiring high performance and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | 2400(mΩ) | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. Detailed parameter description
| Parameter name| Parameter value|
|----------------|-------------------------------------|
| Package type| TO220F |
| Configuration| Single N-channel|
| Maximum drain-source voltage (VDS) | 950V |
| Maximum gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 2400mΩ @ VGS=10V |
| Maximum drain current (ID) | 6A |
| Technology| Plannar |
| Parameter name| Parameter value|
|----------------|-------------------------------------|
| Package type| TO220F |
| Configuration| Single N-channel|
| Maximum drain-source voltage (VDS) | 950V |
| Maximum gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 2400mΩ @ VGS=10V |
| Maximum drain current (ID) | 6A |
| Technology| Plannar |
Domain and module applications：
3. Application fields and modules
VBsemi 2SK3699-01MR-VB MOSFET is suitable for the following fields and modules:
1. **Power inverter:**
2SK3699-01MR-VB can be used in high-voltage DC to AC inverter circuits, such as solar inverters and wind power inverters, to provide efficient power conversion and control.
2. **Electric vehicle charging pile:**
In electric vehicle charging piles, the device can be used as a power switch and control unit to provide efficient energy conversion and charging management functions.
3. **Industrial power system:**
2SK3699-01MR-VB is suitable for switching power supplies and voltage regulators in industrial power systems to provide stable and reliable power output.
4. **Medical equipment: **
This device is suitable for power management and switch control in medical equipment, such as X-ray machines, ultrasonic equipment and medical lasers.
5. **Communication equipment: **
In communication equipment, 2SK3699-01MR-VB can be used in power amplifiers and switching power supplies to provide efficient energy transmission and signal processing capabilities.
Through the introduction of the above application scenarios, it can be seen that VBsemi 2SK3699-01MR-VB is a high-performance power MOSFET suitable for high-voltage and medium-current applications, and is widely used in power inverters, electric vehicle charging piles, industrial power systems, medical equipment, and communication equipment.
VBsemi 2SK3699-01MR-VB MOSFET is suitable for the following fields and modules:
1. **Power inverter:**
2SK3699-01MR-VB can be used in high-voltage DC to AC inverter circuits, such as solar inverters and wind power inverters, to provide efficient power conversion and control.
2. **Electric vehicle charging pile:**
In electric vehicle charging piles, the device can be used as a power switch and control unit to provide efficient energy conversion and charging management functions.
3. **Industrial power system:**
2SK3699-01MR-VB is suitable for switching power supplies and voltage regulators in industrial power systems to provide stable and reliable power output.
4. **Medical equipment: **
This device is suitable for power management and switch control in medical equipment, such as X-ray machines, ultrasonic equipment and medical lasers.
5. **Communication equipment: **
In communication equipment, 2SK3699-01MR-VB can be used in power amplifiers and switching power supplies to provide efficient energy transmission and signal processing capabilities.
Through the introduction of the above application scenarios, it can be seen that VBsemi 2SK3699-01MR-VB is a high-performance power MOSFET suitable for high-voltage and medium-current applications, and is widely used in power inverters, electric vehicle charging piles, industrial power systems, medical equipment, and communication equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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