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2SK3658-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
VBsemi 2SK3658-VB is a high-performance single N-channel power MOSFET in SOT89 package, suitable for low voltage and medium current applications. The device adopts trench technology, has low on-resistance and excellent switching performance, and is very suitable for use in circuits that require high performance and compact packaging, such as power management and load switching applications.
VBsemi 2SK3658-VB is a high-performance single N-channel power MOSFET in SOT89 package, suitable for low voltage and medium current applications. The device adopts trench technology, has low on-resistance and excellent switching performance, and is very suitable for use in circuits that require high performance and compact packaging, such as power management and load switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 60V | 1.7V | 5.5A | 88(mΩ) | 76(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 60V | 1.7V | 5.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 60V | 1.7V | 5.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
II. Detailed parameter description
| Parameter name| Parameter value|
|----------------|-------------------------------------|
| Package type| SOT89 |
| Configuration| Single N-channel|
| Maximum drain-source voltage (VDS) | 60V |
| Maximum gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.7V |
| On-resistance (RDS(ON)) | 88mΩ @ VGS=4.5V, 76mΩ @ VGS=10V |
| Maximum drain current (ID) | 5.5A |
| Technology| Trench |
| Parameter name| Parameter value|
|----------------|-------------------------------------|
| Package type| SOT89 |
| Configuration| Single N-channel|
| Maximum drain-source voltage (VDS) | 60V |
| Maximum gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.7V |
| On-resistance (RDS(ON)) | 88mΩ @ VGS=4.5V, 76mΩ @ VGS=10V |
| Maximum drain current (ID) | 5.5A |
| Technology| Trench |
Domain and module applications：
3. Application fields and modules
VBsemi 2SK3658-VB MOSFET is suitable for the following fields and modules:
1. **Power management module:**
2SK3658-VB can be used in low voltage, medium current power management unit (PMU) and DC-DC converter, and its low on-resistance helps to improve power conversion efficiency and reduce power loss.
2. **Load switch:**
This device performs well in various load switch applications and can be used to control the load in low voltage circuits, providing stable and reliable switching performance.
3. **Consumer electronics:**
In consumer electronic devices such as smartphones, tablets and portable devices, this device can be used in battery management systems, charging circuits and protection circuits, etc., to provide efficient current control.
4. **Industrial Control: **
2SK3658-VB is suitable for low-voltage, medium-current industrial control systems such as sensor interfaces, power tool controls, and small motor drives, and can provide precise current control and protection.
5. **Automotive Electronics: **
In automotive electronic systems, this device is suitable for low-voltage control circuits such as vehicle lighting control, electronic control units (ECUs), and power distribution systems.
Through the introduction of the above application scenarios, it can be seen that VBsemi 2SK3658-VB is a high-efficiency power MOSFET suitable for a variety of low-voltage, medium-current applications, and is widely used in power management, load switches, consumer electronics, industrial control, and automotive electronics.
VBsemi 2SK3658-VB MOSFET is suitable for the following fields and modules:
1. **Power management module:**
2SK3658-VB can be used in low voltage, medium current power management unit (PMU) and DC-DC converter, and its low on-resistance helps to improve power conversion efficiency and reduce power loss.
2. **Load switch:**
This device performs well in various load switch applications and can be used to control the load in low voltage circuits, providing stable and reliable switching performance.
3. **Consumer electronics:**
In consumer electronic devices such as smartphones, tablets and portable devices, this device can be used in battery management systems, charging circuits and protection circuits, etc., to provide efficient current control.
4. **Industrial Control: **
2SK3658-VB is suitable for low-voltage, medium-current industrial control systems such as sensor interfaces, power tool controls, and small motor drives, and can provide precise current control and protection.
5. **Automotive Electronics: **
In automotive electronic systems, this device is suitable for low-voltage control circuits such as vehicle lighting control, electronic control units (ECUs), and power distribution systems.
Through the introduction of the above application scenarios, it can be seen that VBsemi 2SK3658-VB is a high-efficiency power MOSFET suitable for a variety of low-voltage, medium-current applications, and is widely used in power management, load switches, consumer electronics, industrial control, and automotive electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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