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2SK3633-VB Product details
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2SK3633-VB MOSFET Product Introduction
2SK3633-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO3P package. This type of MOSFET has high drain-source voltage and moderate on-resistance, suitable for power management and switching applications requiring high performance and medium power handling capabilities. It adopts SJ_Multi-EPI technology and has excellent conduction characteristics and reliability.
2SK3633-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO3P package. This type of MOSFET has high drain-source voltage and moderate on-resistance, suitable for power management and switching applications requiring high performance and medium power handling capabilities. It adopts SJ_Multi-EPI technology and has excellent conduction characteristics and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | 750(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
2SK3633-VB Detailed parameter description
| Parameter name| Parameter value|
|------------------|------------------------|
| **Package** | TO3P |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 900V |
| **Gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 750mΩ @ VGS=10V |
| **Drain current (ID)** | 9A |
| **Technology** | SJ_Multi-EPI |
| Parameter name| Parameter value|
|------------------|------------------------|
| **Package** | TO3P |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 900V |
| **Gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 750mΩ @ VGS=10V |
| **Drain current (ID)** | 9A |
| **Technology** | SJ_Multi-EPI |
Domain and module applications：
Application areas and modules of 2SK3633-VB
1. **Power management system**: Due to its high drain-source voltage and moderate on-resistance, 2SK3633-VB is suitable for power management systems that require high performance and medium power handling capabilities. For example, in applications such as switch mode power supplies (SMPS) and DC-DC converters, the device can provide high efficiency and reliability.
2. **Power inverter**: In power inverters, devices that can withstand high voltages and high currents are required to achieve DC to AC conversion. The high withstand voltage capability and moderate on-resistance of 2SK3633-VB make it suitable for these inverter modules, helping to improve the conversion efficiency of power systems.
3. **Electric vehicle charging piles**: In electric vehicle charging piles, devices that can withstand high voltages and high currents are required to achieve fast charging. The high drain-source current and moderate on-resistance of 2SK3633-VB make it an ideal choice in these charging piles, helping to improve charging efficiency and stability.
4. **Industrial control systems**: In industrial control systems, devices that can control high-power devices are needed to achieve precise control. The high performance and reliability of the 2SK3633-VB make it an ideal choice in these control systems, helping to improve the response speed and stability of the system.
In summary, the 2SK3633-VB is suitable for electronic devices and systems that require high performance and medium power handling capabilities, especially in applications that require high drain-source voltage and moderate on-resistance.
1. **Power management system**: Due to its high drain-source voltage and moderate on-resistance, 2SK3633-VB is suitable for power management systems that require high performance and medium power handling capabilities. For example, in applications such as switch mode power supplies (SMPS) and DC-DC converters, the device can provide high efficiency and reliability.
2. **Power inverter**: In power inverters, devices that can withstand high voltages and high currents are required to achieve DC to AC conversion. The high withstand voltage capability and moderate on-resistance of 2SK3633-VB make it suitable for these inverter modules, helping to improve the conversion efficiency of power systems.
3. **Electric vehicle charging piles**: In electric vehicle charging piles, devices that can withstand high voltages and high currents are required to achieve fast charging. The high drain-source current and moderate on-resistance of 2SK3633-VB make it an ideal choice in these charging piles, helping to improve charging efficiency and stability.
4. **Industrial control systems**: In industrial control systems, devices that can control high-power devices are needed to achieve precise control. The high performance and reliability of the 2SK3633-VB make it an ideal choice in these control systems, helping to improve the response speed and stability of the system.
In summary, the 2SK3633-VB is suitable for electronic devices and systems that require high performance and medium power handling capabilities, especially in applications that require high drain-source voltage and moderate on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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