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2SK3580-01MR-VB Product details
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Product Introduction: 2SK3580-01MR-VB MOSFET
2SK3580-01MR-VB is a high-performance single N-channel MOSFET produced by VBsemi in a TO220F package. The device is designed to provide high efficiency and reliability for a variety of power and switching applications. The main features of the 2SK3580-01MR-VB include a drain-source voltage (VDS) of 550V, a gate-source voltage (VGS) of ±30V, and a drain current (ID) of 18A. The device uses Plannar technology and has low on-resistance (RDS(ON)) and fast switching characteristics, making it excel in medium-power applications.
2SK3580-01MR-VB is a high-performance single N-channel MOSFET produced by VBsemi in a TO220F package. The device is designed to provide high efficiency and reliability for a variety of power and switching applications. The main features of the 2SK3580-01MR-VB include a drain-source voltage (VDS) of 550V, a gate-source voltage (VGS) of ±30V, and a drain current (ID) of 18A. The device uses Plannar technology and has low on-resistance (RDS(ON)) and fast switching characteristics, making it excel in medium-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260(mΩ) | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: 2SK3580-01MR-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 550V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 260mΩ @ VGS = 10V
- **Drain current (ID)**: 18A
- **Technology**: Plannar
- **Model**: 2SK3580-01MR-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 550V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 260mΩ @ VGS = 10V
- **Drain current (ID)**: 18A
- **Technology**: Plannar
Domain and module applications：
Application fields and module examples
1. **Power inverter**: Due to its moderate drain voltage and low on-resistance, the 2SK3580-01MR-VB is suitable for medium-power power inverters and switching devices in switching power supplies.
2. **Industrial control**: In industrial control applications that require control of medium-power devices and systems, the 2SK3580-01MR-VB can be used as a switching element to achieve fast and reliable switching operations.
3. **Electric vehicle charger**: In medium-power applications such as electric vehicle chargers, the 2SK3580-01MR-VB can be used to control the conversion and management of electrical energy to improve the efficiency and reliability of the charger.
4. **UPS system**: In UPS systems that require high performance and reliability, the 2SK3580-01MR-VB can be used as a key switching element to ensure the normal operation of the system.
In summary, the 2SK3580-01MR-VB MOSFET is suitable for applications such as power inverters, industrial control, electric vehicle chargers and UPS systems, providing high performance and reliability for these applications.
1. **Power inverter**: Due to its moderate drain voltage and low on-resistance, the 2SK3580-01MR-VB is suitable for medium-power power inverters and switching devices in switching power supplies.
2. **Industrial control**: In industrial control applications that require control of medium-power devices and systems, the 2SK3580-01MR-VB can be used as a switching element to achieve fast and reliable switching operations.
3. **Electric vehicle charger**: In medium-power applications such as electric vehicle chargers, the 2SK3580-01MR-VB can be used to control the conversion and management of electrical energy to improve the efficiency and reliability of the charger.
4. **UPS system**: In UPS systems that require high performance and reliability, the 2SK3580-01MR-VB can be used as a key switching element to ensure the normal operation of the system.
In summary, the 2SK3580-01MR-VB MOSFET is suitable for applications such as power inverters, industrial control, electric vehicle chargers and UPS systems, providing high performance and reliability for these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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