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2SK3565-VB Product details
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1. Product Introduction
VBsemi 2SK3565-VB is a high voltage single N-channel power MOSFET in TO220F package, suitable for various high voltage and low power applications. The device adopts planar technology, has high drain-source voltage tolerance and stability, and is suitable for power management and switching circuit applications requiring high voltage and low power.
VBsemi 2SK3565-VB is a high voltage single N-channel power MOSFET in TO220F package, suitable for various high voltage and low power applications. The device adopts planar technology, has high drain-source voltage tolerance and stability, and is suitable for power management and switching circuit applications requiring high voltage and low power.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | 2400(mΩ) | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 6A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. Detailed parameter description
| Parameter name| Parameter value|
|----------------|----------------------------|
| Package type| TO220F |
| Configuration| Single N-channel|
| Maximum drain-source voltage (VDS) | 950V |
| Maximum gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 2400mΩ @ VGS=10V |
| Maximum drain current (ID) | 6A |
| Technology| Plannar |
| Parameter name| Parameter value|
|----------------|----------------------------|
| Package type| TO220F |
| Configuration| Single N-channel|
| Maximum drain-source voltage (VDS) | 950V |
| Maximum gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 2400mΩ @ VGS=10V |
| Maximum drain current (ID) | 6A |
| Technology| Plannar |
Domain and module applications：
3. Application fields and modules
VBsemi 2SK3565-VB MOSFET has a wide range of applications in various fields and modules. The following are several major application scenarios:
1. **Power management module: **
2SK3565-VB can be used in various high-voltage, low-power power management units (PMUs) and switching power supplies. Its high voltage tolerance and low on-resistance help improve power conversion efficiency and reliability.
2. **Switching circuit: **
This device performs well in various high-voltage, low-power switching circuits, such as inverters, DC-DC converters (DC-DC), and DC-AC converters (DC-AC). Its high voltage tolerance and low on-resistance ensure the stability and high efficiency of the circuit.
3. **Electric vehicle charging piles: **
2SK3565-VB is suitable for high voltage and low power applications such as electric vehicle charging piles. Its high voltage tolerance and low on-resistance make it an ideal choice for electric vehicle charging equipment.
4. **Industrial control systems: **
In some high voltage and low power industrial control systems, this device can also play a role, such as sensor interface, motor control and power management.
Through the introduction of the above application scenarios, it can be seen that VBsemi 2SK3565-VB is a high voltage, low power power MOSFET, which is suitable for use in a variety of electronic devices and systems with high voltage and low power requirements.
VBsemi 2SK3565-VB MOSFET has a wide range of applications in various fields and modules. The following are several major application scenarios:
1. **Power management module: **
2SK3565-VB can be used in various high-voltage, low-power power management units (PMUs) and switching power supplies. Its high voltage tolerance and low on-resistance help improve power conversion efficiency and reliability.
2. **Switching circuit: **
This device performs well in various high-voltage, low-power switching circuits, such as inverters, DC-DC converters (DC-DC), and DC-AC converters (DC-AC). Its high voltage tolerance and low on-resistance ensure the stability and high efficiency of the circuit.
3. **Electric vehicle charging piles: **
2SK3565-VB is suitable for high voltage and low power applications such as electric vehicle charging piles. Its high voltage tolerance and low on-resistance make it an ideal choice for electric vehicle charging equipment.
4. **Industrial control systems: **
In some high voltage and low power industrial control systems, this device can also play a role, such as sensor interface, motor control and power management.
Through the introduction of the above application scenarios, it can be seen that VBsemi 2SK3565-VB is a high voltage, low power power MOSFET, which is suitable for use in a variety of electronic devices and systems with high voltage and low power requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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