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2SK3555-01MR-VB Product details
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Product Introduction: 2SK3555-01MR-VB MOSFET
2SK3555-01MR-VB is a high-performance single N-channel MOSFET produced by VBsemi in a TO220F package. The device is designed to provide high efficiency and reliability for a variety of power and switching applications. The main features of the 2SK3555-01MR-VB include a drain-source voltage (VDS) of 250V, a gate-source voltage (VGS) of ±20V, and a drain current (ID) of 40A. The device uses Trench technology, has a low on-resistance (RDS(ON)) and fast switching characteristics, making it perform well in medium-power applications.
2SK3555-01MR-VB is a high-performance single N-channel MOSFET produced by VBsemi in a TO220F package. The device is designed to provide high efficiency and reliability for a variety of power and switching applications. The main features of the 2SK3555-01MR-VB include a drain-source voltage (VDS) of 250V, a gate-source voltage (VGS) of ±20V, and a drain current (ID) of 40A. The device uses Trench technology, has a low on-resistance (RDS(ON)) and fast switching characteristics, making it perform well in medium-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 250V | 3.5V | 40A | 40(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 250V | 3.5V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 250V | 3.5V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: 2SK3555-01MR-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ @ VGS = 10V
- **Drain current (ID)**: 40A
- **Technology**: Trench
- **Model**: 2SK3555-01MR-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ @ VGS = 10V
- **Drain current (ID)**: 40A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Electric vehicle drive**: Due to its high drain voltage and drain current capabilities, the 2SK3555-01MR-VB is suitable for high-power switching circuits in electric vehicle drive systems.
2. **Industrial power supply**: In industrial power supply systems that require high efficiency and reliability, the 2SK3555-01MR-VB can be used as a switching device to achieve efficient energy conversion.
3. **Power inverter**: In power inverters that require high performance, the 2SK3555-01MR-VB can be used to control the conversion and management of electrical energy.
4. **Medical equipment**: In medical equipment, high-reliability and high-power switching devices are required to control various devices and systems. The 2SK3555-01MR-VB can be used in these medical devices to ensure their normal operation and safety.
In summary, the 2SK3555-01MR-VB MOSFET is suitable for fields such as electric vehicle drives, industrial power supplies, power inverters and medical equipment, providing high performance and reliability for these applications.
1. **Electric vehicle drive**: Due to its high drain voltage and drain current capabilities, the 2SK3555-01MR-VB is suitable for high-power switching circuits in electric vehicle drive systems.
2. **Industrial power supply**: In industrial power supply systems that require high efficiency and reliability, the 2SK3555-01MR-VB can be used as a switching device to achieve efficient energy conversion.
3. **Power inverter**: In power inverters that require high performance, the 2SK3555-01MR-VB can be used to control the conversion and management of electrical energy.
4. **Medical equipment**: In medical equipment, high-reliability and high-power switching devices are required to control various devices and systems. The 2SK3555-01MR-VB can be used in these medical devices to ensure their normal operation and safety.
In summary, the 2SK3555-01MR-VB MOSFET is suitable for fields such as electric vehicle drives, industrial power supplies, power inverters and medical equipment, providing high performance and reliability for these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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