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2SK3547-VB Product details
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Product Introduction
**Model**: 2SK3547-VB
**Package**: SOT723-3
**Configuration**: Single N-channel MOSFET
**Technology**: Trench Type
The 2SK3547-VB is a low power N-channel power MOSFET with low drain-source voltage and moderate on-resistance for low power applications. This MOSFET is packaged in SOT723-3, suitable for space-constrained applications and has good heat dissipation performance.
**Model**: 2SK3547-VB
**Package**: SOT723-3
**Configuration**: Single N-channel MOSFET
**Technology**: Trench Type
The 2SK3547-VB is a low power N-channel power MOSFET with low drain-source voltage and moderate on-resistance for low power applications. This MOSFET is packaged in SOT723-3, suitable for space-constrained applications and has good heat dissipation performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 60V | 0.3V | 0.25A | 1375(mΩ) | 1100(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 60V | 0.3V | 0.25A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 60V | 0.3V | 0.25A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N |
Product parameters
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.3V
- **On-resistance (RDS(ON))**:
- 1375mΩ @ VGS=4.5V
- 1100mΩ @ VGS=10V
- **Drain current (ID)**: 0.25A
- **Technology**: Trench type
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.3V
- **On-resistance (RDS(ON))**:
- 1375mΩ @ VGS=4.5V
- 1100mΩ @ VGS=10V
- **Drain current (ID)**: 0.25A
- **Technology**: Trench type
Domain and module applications：
Application fields and module examples
**1. Portable devices **
Due to the low power characteristics and small package of 2SK3547-VB, it is suitable for power management and driving modules in portable devices, such as smartphones, tablets and portable electronic devices.
**2. Analog circuits **
In analog circuits, 2SK3547-VB can be used for power switching and signal conditioning. Its low drain-source voltage and moderate on-resistance help improve the efficiency and performance of analog circuits.
**3. Sensor interface **
In sensor interface circuits, 2SK3547-VB can be used for signal amplification and driving. Its low power characteristics make it suitable for low-power sensor interface applications.
**4. LED drive **
In LED drive circuits, 2SK3547-VB can be used for LED driving and control. Its low power characteristics and moderate on-resistance help improve the efficiency and stability of LED drive circuits.
2SK3547-VB MOSFET is suitable for many different low-power applications, including portable devices, analog circuits, sensor interfaces and LED drivers, providing high-efficiency and reliable solutions for these fields.
**1. Portable devices **
Due to the low power characteristics and small package of 2SK3547-VB, it is suitable for power management and driving modules in portable devices, such as smartphones, tablets and portable electronic devices.
**2. Analog circuits **
In analog circuits, 2SK3547-VB can be used for power switching and signal conditioning. Its low drain-source voltage and moderate on-resistance help improve the efficiency and performance of analog circuits.
**3. Sensor interface **
In sensor interface circuits, 2SK3547-VB can be used for signal amplification and driving. Its low power characteristics make it suitable for low-power sensor interface applications.
**4. LED drive **
In LED drive circuits, 2SK3547-VB can be used for LED driving and control. Its low power characteristics and moderate on-resistance help improve the efficiency and stability of LED drive circuits.
2SK3547-VB MOSFET is suitable for many different low-power applications, including portable devices, analog circuits, sensor interfaces and LED drivers, providing high-efficiency and reliable solutions for these fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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