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2SK3532-VB Product details
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Product Introduction: 2SK3532-VB MOSFET
2SK3532-VB is a high-performance single N-channel MOSFET produced by VBsemi in TO220F package. The device is designed to provide high efficiency and reliability for a variety of power and switching applications. The main features of 2SK3532-VB include 900V drain-source voltage (VDS), ±30V gate-source voltage (VGS), and 5A drain current (ID). The device uses SJ_Multi-EPI technology, with low on-resistance (RDS(ON)) and fast switching characteristics, making it excel in high-voltage and high-power applications.
2SK3532-VB is a high-performance single N-channel MOSFET produced by VBsemi in TO220F package. The device is designed to provide high efficiency and reliability for a variety of power and switching applications. The main features of 2SK3532-VB include 900V drain-source voltage (VDS), ±30V gate-source voltage (VGS), and 5A drain current (ID). The device uses SJ_Multi-EPI technology, with low on-resistance (RDS(ON)) and fast switching characteristics, making it excel in high-voltage and high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 5A | 1500(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: 2SK3532-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1500mΩ @ VGS = 10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Model**: 2SK3532-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1500mΩ @ VGS = 10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Power transmission and distribution**: Due to its high drain voltage and moderate on-resistance, the 2SK3532-VB is suitable for switching devices in high-voltage power transmission and distribution equipment and power management systems.
2. **Industrial control**: In industrial control applications that require control of high-voltage equipment and systems, the 2SK3532-VB can be used as a switching element to achieve fast and reliable switching operations.
3. **Solar inverter**: In solar inverters, high-performance MOSFETs are required to achieve power conversion and management. The 2SK3532-VB can be used in these inverters to provide high-efficiency energy conversion.
4. **Medical equipment**: In medical equipment, reliable high-voltage switching devices are required to control various equipment and systems. The 2SK3532-VB can be used in these medical devices to ensure their normal operation and safety.
In summary, the 2SK3532-VB MOSFET is suitable for fields such as power transmission and distribution, industrial control, solar inverters and medical equipment, providing high performance and reliability for these applications.
1. **Power transmission and distribution**: Due to its high drain voltage and moderate on-resistance, the 2SK3532-VB is suitable for switching devices in high-voltage power transmission and distribution equipment and power management systems.
2. **Industrial control**: In industrial control applications that require control of high-voltage equipment and systems, the 2SK3532-VB can be used as a switching element to achieve fast and reliable switching operations.
3. **Solar inverter**: In solar inverters, high-performance MOSFETs are required to achieve power conversion and management. The 2SK3532-VB can be used in these inverters to provide high-efficiency energy conversion.
4. **Medical equipment**: In medical equipment, reliable high-voltage switching devices are required to control various equipment and systems. The 2SK3532-VB can be used in these medical devices to ensure their normal operation and safety.
In summary, the 2SK3532-VB MOSFET is suitable for fields such as power transmission and distribution, industrial control, solar inverters and medical equipment, providing high performance and reliability for these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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