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2SK3497-VB Product details
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2SK3497-VB MOSFET Product Introduction
2SK3497-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) packaged in TO3P. This type of MOSFET has high drain-source voltage and low on-resistance, suitable for power management and switching applications that require high performance and high power handling capabilities. It uses Trench technology and has excellent stability and reliability.
2SK3497-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) packaged in TO3P. This type of MOSFET has high drain-source voltage and low on-resistance, suitable for power management and switching applications that require high performance and high power handling capabilities. It uses Trench technology and has excellent stability and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 200V | 4V | 96A | 13.8(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
2SK3497-VB Detailed parameter description
| Parameter name | Parameter value|
|------------------|------------------------|
| **Package form** | TO3P |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 200V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 4V |
| **On-resistance (RDS(ON))** | 13.8mΩ @ VGS=10V |
| **Drain current (ID)** | 96A |
| **Technology** | Trench |
| Parameter name | Parameter value|
|------------------|------------------------|
| **Package form** | TO3P |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 200V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 4V |
| **On-resistance (RDS(ON))** | 13.8mΩ @ VGS=10V |
| **Drain current (ID)** | 96A |
| **Technology** | Trench |
Domain and module applications：
Applications and modules of 2SK3497-VB
1. **Power management system**: Due to its low on-resistance and high drain-source voltage, 2SK3497-VB is suitable for power management systems that require high performance and high power handling capabilities. For example, in applications such as switching power supplies (SMPS) and DC-DC converters, the device can provide high efficiency and reliability.
2. **Electric vehicle control**: In electric vehicle control systems, devices that can withstand high voltages and high currents are required to achieve fast response and precise control. The high drain-source current and low on-resistance of 2SK3497-VB make it an ideal choice in these control systems, helping to improve the performance and driving experience of electric vehicles.
3. **Solar inverter**: In solar power generation systems, inverters convert DC power into AC power. The high withstand voltage capability and low on-resistance of 2SK3497-VB make it suitable for these inverter modules, helping to improve the conversion efficiency of photovoltaic systems.
4. **Industrial automation equipment**: In industrial control systems, MOSFETs are used to drive various loads such as motors, solenoid valves, etc. The high performance and high reliability of the 2SK3497-VB make it an ideal choice for these applications, helping to improve the response speed and stability of the system.
5. **Battery management system**: In battery management systems, devices that can control the charging and discharging process are required. The high power handling capability and low on-resistance of the 2SK3497-VB make it an ideal choice for these systems, helping to improve the charging and discharging efficiency and safety of the battery.
In summary, the 2SK3497-VB is suitable for electronic devices and systems that require high performance and high power handling capabilities, especially in applications that require high drain-source voltage and low on-resistance.
1. **Power management system**: Due to its low on-resistance and high drain-source voltage, 2SK3497-VB is suitable for power management systems that require high performance and high power handling capabilities. For example, in applications such as switching power supplies (SMPS) and DC-DC converters, the device can provide high efficiency and reliability.
2. **Electric vehicle control**: In electric vehicle control systems, devices that can withstand high voltages and high currents are required to achieve fast response and precise control. The high drain-source current and low on-resistance of 2SK3497-VB make it an ideal choice in these control systems, helping to improve the performance and driving experience of electric vehicles.
3. **Solar inverter**: In solar power generation systems, inverters convert DC power into AC power. The high withstand voltage capability and low on-resistance of 2SK3497-VB make it suitable for these inverter modules, helping to improve the conversion efficiency of photovoltaic systems.
4. **Industrial automation equipment**: In industrial control systems, MOSFETs are used to drive various loads such as motors, solenoid valves, etc. The high performance and high reliability of the 2SK3497-VB make it an ideal choice for these applications, helping to improve the response speed and stability of the system.
5. **Battery management system**: In battery management systems, devices that can control the charging and discharging process are required. The high power handling capability and low on-resistance of the 2SK3497-VB make it an ideal choice for these systems, helping to improve the charging and discharging efficiency and safety of the battery.
In summary, the 2SK3497-VB is suitable for electronic devices and systems that require high performance and high power handling capabilities, especially in applications that require high drain-source voltage and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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