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2SK3483-Z-E1-AZ-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
VBsemi 2SK3483-Z-E1-AZ-VB is a high-performance single N-channel power MOSFET in TO252 package, suitable for various high voltage and high power applications. The device adopts trench technology, has the characteristics of low on-resistance and high switching speed, and is suitable for power management and motor drive applications requiring high efficiency and high reliability.
VBsemi 2SK3483-Z-E1-AZ-VB is a high-performance single N-channel power MOSFET in TO252 package, suitable for various high voltage and high power applications. The device adopts trench technology, has the characteristics of low on-resistance and high switching speed, and is suitable for power management and motor drive applications requiring high efficiency and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 35(mΩ) | 30(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description
| Parameter name| Parameter value|
|----------------|----------------------------|
| Package type| TO252 |
| Configuration| Single N-channel|
| Maximum drain-source voltage (VDS) | 100V |
| Maximum gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.8V |
| On-resistance (RDS(ON)) | 35mΩ @ VGS=4.5V；30mΩ @ VGS=10V |
| Maximum drain current (ID) | 40A |
| Technology| Trench |
| Parameter name| Parameter value|
|----------------|----------------------------|
| Package type| TO252 |
| Configuration| Single N-channel|
| Maximum drain-source voltage (VDS) | 100V |
| Maximum gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.8V |
| On-resistance (RDS(ON)) | 35mΩ @ VGS=4.5V；30mΩ @ VGS=10V |
| Maximum drain current (ID) | 40A |
| Technology| Trench |
Domain and module applications：
3. Application fields and modules
VBsemi 2SK3483-Z-E1-AZ-VB MOSFET has a wide range of applications in a variety of fields and modules. The following are several major application scenarios:
1. **Power management module:**
2SK3483-Z-E1-AZ-VB can be used in various high-power power management units (PMUs) and switching power supplies. Its high current handling capability and low on-resistance help improve power conversion efficiency and reliability.
2. **Motor drive module:**
This device performs well in motor drive applications such as power tools, brushless DC motors (BLDC) and stepper motor drivers. Its high switching speed and high current handling capability make it an ideal choice for motor control.
3. **Automotive electronics:**
2SK3483-Z-E1-AZ-VB is suitable for automotive electronics such as electric vehicle charging piles, electric vehicle drive controllers and vehicle power management systems. Its high reliability and stability meet the requirements of automotive electronic equipment.
4. **Industrial control system: **
In industrial control systems, this MOSFET can be used for various high-power switch control and drive to ensure stable operation and high efficiency of the system.
5. **LED lighting: **
In some LED lighting applications that require high-power switches, this device can also play a role in improving the efficiency and reliability of LED lighting systems.
Through the introduction of the above application scenarios, it can be seen that VBsemi 2SK3483-Z-E1-AZ-VB is a high-performance, high-power power MOSFET, suitable for use in a variety of electronic devices and systems with high voltage and high power requirements.
VBsemi 2SK3483-Z-E1-AZ-VB MOSFET has a wide range of applications in a variety of fields and modules. The following are several major application scenarios:
1. **Power management module:**
2SK3483-Z-E1-AZ-VB can be used in various high-power power management units (PMUs) and switching power supplies. Its high current handling capability and low on-resistance help improve power conversion efficiency and reliability.
2. **Motor drive module:**
This device performs well in motor drive applications such as power tools, brushless DC motors (BLDC) and stepper motor drivers. Its high switching speed and high current handling capability make it an ideal choice for motor control.
3. **Automotive electronics:**
2SK3483-Z-E1-AZ-VB is suitable for automotive electronics such as electric vehicle charging piles, electric vehicle drive controllers and vehicle power management systems. Its high reliability and stability meet the requirements of automotive electronic equipment.
4. **Industrial control system: **
In industrial control systems, this MOSFET can be used for various high-power switch control and drive to ensure stable operation and high efficiency of the system.
5. **LED lighting: **
In some LED lighting applications that require high-power switches, this device can also play a role in improving the efficiency and reliability of LED lighting systems.
Through the introduction of the above application scenarios, it can be seen that VBsemi 2SK3483-Z-E1-AZ-VB is a high-performance, high-power power MOSFET, suitable for use in a variety of electronic devices and systems with high voltage and high power requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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