中文
English
2SK3399-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
VBsemi 2SK3399-VB is a high voltage single N-channel power MOSFET in TO220F package, suitable for various high voltage and high power applications. This device adopts planar technology, has good performance and reliability, and is suitable for various power management and switching circuit applications requiring high voltage and high reliability.
VBsemi 2SK3399-VB is a high voltage single N-channel power MOSFET in TO220F package, suitable for various high voltage and high power applications. This device adopts planar technology, has good performance and reliability, and is suitable for various power management and switching circuit applications requiring high voltage and high reliability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680(mΩ) | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. Detailed parameter description
| Parameter name| Parameter value|
|----------------|----------------------------|
| Package type| TO220F |
| Configuration| Single N-channel|
| Maximum drain-source voltage (VDS) | 650V |
| Maximum gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 680mΩ @ VGS=10V |
| Maximum drain current (ID) | 12A |
| Technology| Plannar |
| Parameter name| Parameter value|
|----------------|----------------------------|
| Package type| TO220F |
| Configuration| Single N-channel|
| Maximum drain-source voltage (VDS) | 650V |
| Maximum gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 680mΩ @ VGS=10V |
| Maximum drain current (ID) | 12A |
| Technology| Plannar |
Domain and module applications：
3. Application fields and modules
VBsemi 2SK3399-VB MOSFET has a wide range of applications in various fields and modules. The following are several major application scenarios:
1. **Power management module:**
2SK3399-VB can be used in various high-voltage power management units (PMU) and switching power supplies. Its high voltage tolerance and low on-resistance help improve power conversion efficiency and reliability.
2. **Switching circuit:**
This device performs well in various high-voltage switching circuits, such as inverters, DC-DC converters (DC-DC), and DC-AC converters (DC-AC). Its high voltage tolerance and low on-resistance ensure the stability and high efficiency of the circuit.
3. **Electric vehicle charging pile:**
2SK3399-VB is suitable for the switching circuit of electric vehicle charging piles. Its high voltage tolerance and low on-resistance help improve the efficiency and reliability of charging piles.
4. **Industrial control systems: **
In industrial control systems, this MOSFET can be used for various high-voltage switch control and drive to ensure stable operation and high efficiency of the system.
5. **LED lighting: **
In some LED lighting applications that require high-voltage switches, this device can also play a role in improving the efficiency and reliability of LED lighting systems.
Through the introduction of the above application scenarios, it can be seen that VBsemi 2SK3399-VB is a high-voltage, high-performance power MOSFET suitable for use in a variety of electronic devices and systems with high voltage and high power requirements.
VBsemi 2SK3399-VB MOSFET has a wide range of applications in various fields and modules. The following are several major application scenarios:
1. **Power management module:**
2SK3399-VB can be used in various high-voltage power management units (PMU) and switching power supplies. Its high voltage tolerance and low on-resistance help improve power conversion efficiency and reliability.
2. **Switching circuit:**
This device performs well in various high-voltage switching circuits, such as inverters, DC-DC converters (DC-DC), and DC-AC converters (DC-AC). Its high voltage tolerance and low on-resistance ensure the stability and high efficiency of the circuit.
3. **Electric vehicle charging pile:**
2SK3399-VB is suitable for the switching circuit of electric vehicle charging piles. Its high voltage tolerance and low on-resistance help improve the efficiency and reliability of charging piles.
4. **Industrial control systems: **
In industrial control systems, this MOSFET can be used for various high-voltage switch control and drive to ensure stable operation and high efficiency of the system.
5. **LED lighting: **
In some LED lighting applications that require high-voltage switches, this device can also play a role in improving the efficiency and reliability of LED lighting systems.
Through the introduction of the above application scenarios, it can be seen that VBsemi 2SK3399-VB is a high-voltage, high-performance power MOSFET suitable for use in a variety of electronic devices and systems with high voltage and high power requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
