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2SK3367-Z-E1-AZ-VB Product details
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1. 2SK3367-Z-E1-AZ-VB Product Introduction
2SK3367-Z-E1-AZ-VB is a high-performance N-channel power MOSFET produced by VBsemi, using TO252 package. The device is designed to provide high-efficiency and high-reliability power transmission solutions for various industrial and consumer electronics applications. It uses advanced Trench technology and has excellent on-resistance and switching characteristics.
2SK3367-Z-E1-AZ-VB is a high-performance N-channel power MOSFET produced by VBsemi, using TO252 package. The device is designed to provide high-efficiency and high-reliability power transmission solutions for various industrial and consumer electronics applications. It uses advanced Trench technology and has excellent on-resistance and switching characteristics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 9(mΩ) | 7(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. 2SK3367-Z-E1-AZ-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 9mΩ @ VGS=4.5V, 7mΩ @ VGS=10V
- **Drain current (ID)**: 70A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 9mΩ @ VGS=4.5V, 7mΩ @ VGS=10V
- **Drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
3. Application fields and module examples
2SK3367-Z-E1-AZ-VB, as a high-performance N-channel power MOSFET, is widely used in the following fields and modules:
1. **Power management**:
- **Switching power supply**: Used in various switching power supplies, 2SK3367-Z-E1-AZ-VB can provide efficient power conversion and reduce energy loss.
- **Power adapter**: In the power adapters of various electronic devices, the high performance and reliability of this device can provide stable power output.
2. **Automotive electronics**:
- **In-vehicle electronic systems**: In automotive electronic systems, such as on-board chargers and on-board power management systems, 2SK3367-Z-E1-AZ-VB can provide efficient power transmission and control signals.
3. **Industrial control**:
- **Industrial automation equipment**: In industrial automation equipment, 2SK3367-Z-E1-AZ-VB can be used for switch control and power transmission, providing reliable power support.
- **PLC control**: Used in PLC (Programmable Logic Controller) to provide stable control signals and power support.
4. **Communication equipment**:
- **Communication base station**: In communication base stations, 2SK3367-Z-E1-AZ-VB can be used for power amplification and signal amplification, providing stable communication signals.
- **Network equipment**: Used in various network equipment, such as routers and switches, to provide efficient power transmission and control signals.
5. **Consumer electronics**:
- **TV and audio systems**: In TV and audio systems, 2SK3367-Z-E1-AZ-VB can be used for power amplification and signal amplification, providing high-quality audio and video output.
2SK3367-Z-E1-AZ-VB has high performance, high reliability and a wide range of applications. It is an ideal choice for various electronic systems and can improve the performance and reliability of the system.
2SK3367-Z-E1-AZ-VB, as a high-performance N-channel power MOSFET, is widely used in the following fields and modules:
1. **Power management**:
- **Switching power supply**: Used in various switching power supplies, 2SK3367-Z-E1-AZ-VB can provide efficient power conversion and reduce energy loss.
- **Power adapter**: In the power adapters of various electronic devices, the high performance and reliability of this device can provide stable power output.
2. **Automotive electronics**:
- **In-vehicle electronic systems**: In automotive electronic systems, such as on-board chargers and on-board power management systems, 2SK3367-Z-E1-AZ-VB can provide efficient power transmission and control signals.
3. **Industrial control**:
- **Industrial automation equipment**: In industrial automation equipment, 2SK3367-Z-E1-AZ-VB can be used for switch control and power transmission, providing reliable power support.
- **PLC control**: Used in PLC (Programmable Logic Controller) to provide stable control signals and power support.
4. **Communication equipment**:
- **Communication base station**: In communication base stations, 2SK3367-Z-E1-AZ-VB can be used for power amplification and signal amplification, providing stable communication signals.
- **Network equipment**: Used in various network equipment, such as routers and switches, to provide efficient power transmission and control signals.
5. **Consumer electronics**:
- **TV and audio systems**: In TV and audio systems, 2SK3367-Z-E1-AZ-VB can be used for power amplification and signal amplification, providing high-quality audio and video output.
2SK3367-Z-E1-AZ-VB has high performance, high reliability and a wide range of applications. It is an ideal choice for various electronic systems and can improve the performance and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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