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2SK3365-Z-E1-AZ-VB Product details
Back to previous pageProduct introduction：
1. 2SK3365-Z-E1-AZ-VB Product Introduction
2SK3365-Z-E1-AZ-VB is a high-performance single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO252 package. This MOSFET has moderate drain-source voltage and on-resistance, suitable for medium and low voltage power management and switching circuit applications. It adopts Trench technology and has excellent electrical performance and reliability.
2SK3365-Z-E1-AZ-VB is a high-performance single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO252 package. This MOSFET has moderate drain-source voltage and on-resistance, suitable for medium and low voltage power management and switching circuit applications. It adopts Trench technology and has excellent electrical performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 9(mΩ) | 7(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. 2SK3365-Z-E1-AZ-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Drain current (ID)**: 70A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
3. Application fields and module description
Application fields
1. **Power management system**
- 2SK3365-Z-E1-AZ-VB is suitable for medium and low voltage power management systems, such as switching power supplies and voltage regulators in consumer electronics and industrial equipment.
2. **Automotive electronics**
- In automotive electronic systems, such as control and protection circuits in engine control units (ECUs), electric power steering systems, and in-car entertainment systems.
3. **Industrial control**
- Suitable for power management and switching circuits in industrial control systems to ensure stable operation of industrial equipment.
4. **LED lighting**
- In LED lighting systems, this MOSFET can be used to drive LED lamp beads to provide stable current and voltage control.
Application Modules
1. **Power Switch Module**
- In various power switch modules, 2SK3365-Z-E1-AZ-VB can be used to control the switch tube to achieve high-efficiency energy conversion.
2. **Motor Drive Module**
- In industrial and commercial motor drive systems, this MOSFET can be used to control the speed and torque of the motor, improving the efficiency and responsiveness of the system.
3. **Inverter Module**
- 2SK3365-Z-E1-AZ-VB can be used in inverter modules to convert DC power into AC power, suitable for applications such as solar inverters and UPS systems.
4. **Electric Vehicle Battery Management System**
- In the battery management system of electric vehicles, this MOSFET can be used to control the battery charging and discharging process, improving the performance and range of electric vehicles.
Through the above introduction, parameter description and application examples, we can see that 2SK3365-Z-E1-AZ-VB is widely used in many fields and modules. Its high performance and reliability make it an important part of electronic design.
Application fields
1. **Power management system**
- 2SK3365-Z-E1-AZ-VB is suitable for medium and low voltage power management systems, such as switching power supplies and voltage regulators in consumer electronics and industrial equipment.
2. **Automotive electronics**
- In automotive electronic systems, such as control and protection circuits in engine control units (ECUs), electric power steering systems, and in-car entertainment systems.
3. **Industrial control**
- Suitable for power management and switching circuits in industrial control systems to ensure stable operation of industrial equipment.
4. **LED lighting**
- In LED lighting systems, this MOSFET can be used to drive LED lamp beads to provide stable current and voltage control.
Application Modules
1. **Power Switch Module**
- In various power switch modules, 2SK3365-Z-E1-AZ-VB can be used to control the switch tube to achieve high-efficiency energy conversion.
2. **Motor Drive Module**
- In industrial and commercial motor drive systems, this MOSFET can be used to control the speed and torque of the motor, improving the efficiency and responsiveness of the system.
3. **Inverter Module**
- 2SK3365-Z-E1-AZ-VB can be used in inverter modules to convert DC power into AC power, suitable for applications such as solar inverters and UPS systems.
4. **Electric Vehicle Battery Management System**
- In the battery management system of electric vehicles, this MOSFET can be used to control the battery charging and discharging process, improving the performance and range of electric vehicles.
Through the above introduction, parameter description and application examples, we can see that 2SK3365-Z-E1-AZ-VB is widely used in many fields and modules. Its high performance and reliability make it an important part of electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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