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2SK3355-VB Product details
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Product Introduction
2SK3355-VB is a single N-channel MOSFET in TO263 package. This MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, suitable for high-power power management and power control applications. It uses Trench technology, has very low on-resistance (RDS(ON)) and high drain current (ID) capability, suitable for applications with high power requirements.
2SK3355-VB is a single N-channel MOSFET in TO263 package. This MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, suitable for high-power power management and power control applications. It uses Trench technology, has very low on-resistance (RDS(ON)) and high drain current (ID) capability, suitable for applications with high power requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: 2SK3355-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench
- **Model**: 2SK3355-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **High-power power supply**: Due to its very low on-resistance and high drain current, the 2SK3355-VB is suitable for high-power power management modules such as industrial power supplies and server power supplies. It can maintain low losses at high currents and improve system efficiency.
2. **Electric vehicles**: In electric vehicles, this MOSFET can be used in motor drives and battery management systems. Its high current carrying capacity and low on-resistance help improve the performance and range of electric vehicles.
3. **Industrial control**: The 2SK3355-VB is suitable for a variety of industrial control applications such as motor drives, UPS systems, and industrial automation equipment. Its stability and efficient energy conversion characteristics help improve the reliability and efficiency of industrial equipment.
4. **Power amplifier**: This MOSFET can also be used in audio power amplifiers and switch control parts in power amplifiers. Its low on-resistance and high drain current can provide high-quality audio output.
In summary, the 2SK3355-VB is a high-performance and versatile MOSFET suitable for fields and modules such as high-power power supplies, electric vehicles, industrial control, and power amplifiers.
1. **High-power power supply**: Due to its very low on-resistance and high drain current, the 2SK3355-VB is suitable for high-power power management modules such as industrial power supplies and server power supplies. It can maintain low losses at high currents and improve system efficiency.
2. **Electric vehicles**: In electric vehicles, this MOSFET can be used in motor drives and battery management systems. Its high current carrying capacity and low on-resistance help improve the performance and range of electric vehicles.
3. **Industrial control**: The 2SK3355-VB is suitable for a variety of industrial control applications such as motor drives, UPS systems, and industrial automation equipment. Its stability and efficient energy conversion characteristics help improve the reliability and efficiency of industrial equipment.
4. **Power amplifier**: This MOSFET can also be used in audio power amplifiers and switch control parts in power amplifiers. Its low on-resistance and high drain current can provide high-quality audio output.
In summary, the 2SK3355-VB is a high-performance and versatile MOSFET suitable for fields and modules such as high-power power supplies, electric vehicles, industrial control, and power amplifiers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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