2SK3312-VB Product details
Product introduction:
2SK3312-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) packaged in TO220F. This type of MOSFET has high drain-source voltage and low on-resistance, suitable for power management and switching applications requiring high performance and high reliability. It uses Plannar technology and has stability and reliability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830(mΩ) | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
| Parameter name| Parameter value|
|------------------|------------------------|
| **Package** | TO220F |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 650V |
| **Gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 830mΩ @ VGS=10V |
| **Drain current (ID)** | 10A |
| **Technology** | Plannar |
Domain and module applications:
1. **Power management systems**: Due to its high drain-source voltage and low on-resistance, the 2SK3312-VB is ideal for power management systems that require high power handling capabilities and high voltage tolerance. For example, in applications such as switch mode power supplies (SMPS) and DC-DC converters, the device can provide high efficiency and reliability.
2. **Industrial drives**: In industrial control systems, devices that can drive high power loads are required. The high drain-source voltage and low on-resistance of the 2SK3312-VB make it an ideal choice in industrial drives, helping to improve the response speed and stability of the system.
3. **Charging piles**: In electric vehicle charging piles, devices that can withstand high voltages and high currents are required to achieve fast charging. The high drain-source voltage and high current tolerance of the 2SK3312-VB make it an ideal choice in these charging piles, helping to improve charging efficiency and speed.
4. **Solar inverter**: In solar power generation systems, inverters convert DC power into AC power. The high withstand voltage and low on-resistance of 2SK3312-VB make it suitable for these inverter modules, which helps to improve the conversion efficiency of photovoltaic systems.
5. **UPS (Uninterruptible Power Supply)**: UPS systems require devices with high reliability and stability to ensure the continuity of power supply. The high performance and high reliability of 2SK3312-VB make it an ideal choice for UPS systems, providing reliable power guarantee.
Through these application examples, it can be seen that 2SK3312-VB plays an important role in the fields of high performance and high reliability requirements, and is suitable for various electronic devices and systems that require high power handling and high voltage tolerance.
Technical support:
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