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2SK3310-VB Product details
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Product Introduction: 2SK3310-VB MOSFET
2SK3310-VB is a high-performance single N-channel MOSFET produced by VBsemi in TO220F package. The device is designed to provide high efficiency and reliability for a variety of power and switching applications. The main features of the 2SK3310-VB include 650V drain-source voltage (VDS), ±30V gate-source voltage (VGS), and 12A drain current (ID). The device uses Plannar technology and has a higher on-resistance (RDS(ON)), suitable for medium power applications.
2SK3310-VB is a high-performance single N-channel MOSFET produced by VBsemi in TO220F package. The device is designed to provide high efficiency and reliability for a variety of power and switching applications. The main features of the 2SK3310-VB include 650V drain-source voltage (VDS), ±30V gate-source voltage (VGS), and 12A drain current (ID). The device uses Plannar technology and has a higher on-resistance (RDS(ON)), suitable for medium power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680(mΩ) | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: 2SK3310-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 680mΩ @ VGS = 10V
- **Drain current (ID)**: 12A
- **Technology**: Plannar
- **Model**: 2SK3310-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 680mΩ @ VGS = 10V
- **Drain current (ID)**: 12A
- **Technology**: Plannar
Domain and module applications：
Applications and module examples
1. **Power management**: Due to its high drain-source voltage and moderate on-resistance, the 2SK3310-VB is suitable for medium-power switching power supplies and power inverters.
2. **Electric vehicle charger**: In electric vehicle chargers, MOSFETs are used to control the charging process. The high withstand voltage and moderate drain current characteristics of the 2SK3310-VB make it an ideal choice for this application.
3. **Industrial control**: In industrial control systems, the 2SK3310-VB can be used as a switching device to control various power equipment and motors.
4. **Power inverter**: Power inverters require high-voltage, high-current switching devices to achieve DC to AC conversion. The 2SK3310-VB can be used in these applications to provide reliable switching functions.
In summary, the 2SK3310-VB MOSFET is suitable for multiple fields such as power management, electric vehicle chargers, industrial control and power inverters with its high withstand voltage, moderate on-resistance and reliability, helping to achieve high efficiency and stable operation.
1. **Power management**: Due to its high drain-source voltage and moderate on-resistance, the 2SK3310-VB is suitable for medium-power switching power supplies and power inverters.
2. **Electric vehicle charger**: In electric vehicle chargers, MOSFETs are used to control the charging process. The high withstand voltage and moderate drain current characteristics of the 2SK3310-VB make it an ideal choice for this application.
3. **Industrial control**: In industrial control systems, the 2SK3310-VB can be used as a switching device to control various power equipment and motors.
4. **Power inverter**: Power inverters require high-voltage, high-current switching devices to achieve DC to AC conversion. The 2SK3310-VB can be used in these applications to provide reliable switching functions.
In summary, the 2SK3310-VB MOSFET is suitable for multiple fields such as power management, electric vehicle chargers, industrial control and power inverters with its high withstand voltage, moderate on-resistance and reliability, helping to achieve high efficiency and stable operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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