2SK3262-VB Product details
Product introduction:
2SK3262-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) packaged in TO220F. This type of MOSFET has high drain-source voltage and high drain current, suitable for power management and switching applications requiring high performance and high reliability. It uses advanced Trench technology, with low on-resistance and high switching speed.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | 58(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
| Parameter name| Parameter value|
|------------------|------------------------|
| **Package** | TO220F |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 200V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 58mΩ @ VGS=10V |
| **Drain current (ID)** | 20A |
| **Technology** | Trench |
Domain and module applications:
1. **Power management systems**: Due to its high drain-source voltage and high drain current, the 2SK3262-VB is ideal for power management systems that require high power handling and low conduction losses. For example, in applications such as switch mode power supplies (SMPS) and DC-DC converters, the device can provide high efficiency and reliability.
2. **Electric vehicle (EV) charging piles**: In electric vehicle charging piles, devices that can withstand high voltages and high currents are required to achieve fast charging. The high drain-source voltage and high drain current of the 2SK3262-VB make it an ideal choice in these charging piles, helping to improve charging efficiency and speed.
3. **Solar inverters**: In solar power generation systems, inverters convert DC power into AC power. The high drain-source voltage and high drain current of the 2SK3262-VB make it suitable for these inverter modules, helping to improve the conversion efficiency of photovoltaic systems.
4. **Industrial control systems**: In industrial control systems, MOSFETs are used to drive various loads such as motors, solenoid valves, and relays. The high performance and high reliability of 2SK3262-VB make it an ideal choice for these applications, helping to improve the response speed and stability of the system.
5. **Battery Management System (BMS)**: In electric vehicles and energy storage systems, battery management systems require devices that can efficiently manage the battery charging and discharging process. The low on-resistance and high drain current of 2SK3262-VB make it an ideal choice for these systems, reducing energy loss and extending battery life.
Through these application examples, it can be seen that 2SK3262-VB plays an important role in the fields of high performance and high reliability requirements, and is suitable for various electronic devices and systems that require high power handling and low conduction loss.
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