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2SK3262-01MR-VB Product details
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Product Introduction: 2SK3262-01MR-VB MOSFET
2SK3262-01MR-VB is a high-performance single N-channel MOSFET produced by VBsemi in a TO220F package. The device is designed to provide high efficiency and reliability for a variety of power and switching applications. The main features of the 2SK3262-01MR-VB include a drain-source voltage (VDS) of 200V, a gate-source voltage (VGS) of ±20V, and a drain current (ID) of 20A. The device uses Trench technology and has low on-resistance (RDS(ON)) and fast switching characteristics, making it excel in high-power applications.
2SK3262-01MR-VB is a high-performance single N-channel MOSFET produced by VBsemi in a TO220F package. The device is designed to provide high efficiency and reliability for a variety of power and switching applications. The main features of the 2SK3262-01MR-VB include a drain-source voltage (VDS) of 200V, a gate-source voltage (VGS) of ±20V, and a drain current (ID) of 20A. The device uses Trench technology and has low on-resistance (RDS(ON)) and fast switching characteristics, making it excel in high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | 58(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: 2SK3262-01MR-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 58mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology**: Trench
- **Model**: 2SK3262-01MR-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 58mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Power Management**: The 2SK3262-01MR-VB MOSFET is suitable for applications such as Switching Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and DC-DC Converters. Its 200V VDS and 20A ID make it ideal for handling high power supplies.
2. **Motor Control**: In motor drive circuits, the 2SK3262-01MR-VB can be used as an efficient switching device to help achieve precise control and efficient operation of the motor. Its low RDS(ON) characteristics help reduce power consumption and improve the overall efficiency of the system.
3. **Photovoltaic Inverter**: Photovoltaic inverters require reliable high-voltage switching devices to convert the DC power generated by solar panels into AC power. The high withstand voltage and high current capabilities of the 2SK3262-01MR-VB make it an ideal choice for this application.
4. **Electric vehicle charger**: In electric vehicle chargers, MOSFET is used to control the charging process. The high efficiency and reliability of 2SK3262-01MR-VB ensure the stable operation of the charger under high power conditions, providing fast and safe charging services.
In summary, 2SK3262-01MR-VB MOSFET is widely used in power management, motor control, photovoltaic inverters, electric vehicle chargers and other fields with its high performance parameters and reliability, helping to achieve high efficiency and stable operation.
1. **Power Management**: The 2SK3262-01MR-VB MOSFET is suitable for applications such as Switching Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and DC-DC Converters. Its 200V VDS and 20A ID make it ideal for handling high power supplies.
2. **Motor Control**: In motor drive circuits, the 2SK3262-01MR-VB can be used as an efficient switching device to help achieve precise control and efficient operation of the motor. Its low RDS(ON) characteristics help reduce power consumption and improve the overall efficiency of the system.
3. **Photovoltaic Inverter**: Photovoltaic inverters require reliable high-voltage switching devices to convert the DC power generated by solar panels into AC power. The high withstand voltage and high current capabilities of the 2SK3262-01MR-VB make it an ideal choice for this application.
4. **Electric vehicle charger**: In electric vehicle chargers, MOSFET is used to control the charging process. The high efficiency and reliability of 2SK3262-01MR-VB ensure the stable operation of the charger under high power conditions, providing fast and safe charging services.
In summary, 2SK3262-01MR-VB MOSFET is widely used in power management, motor control, photovoltaic inverters, electric vehicle chargers and other fields with its high performance parameters and reliability, helping to achieve high efficiency and stable operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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