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2SK3219-01MR-VB Product details
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1. 2SK3219-01MR-VB Product Introduction
2SK3219-01MR-VB is a high-performance N-channel power MOSFET produced by VBsemi, using TO220F package. The device is designed to provide high-efficiency and high-reliability power transmission solutions for various industrial and consumer electronics applications. Its advanced Trench technology can significantly reduce on-resistance and switching losses, and improve overall system performance.
2SK3219-01MR-VB is a high-performance N-channel power MOSFET produced by VBsemi, using TO220F package. The device is designed to provide high-efficiency and high-reliability power transmission solutions for various industrial and consumer electronics applications. Its advanced Trench technology can significantly reduce on-resistance and switching losses, and improve overall system performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 45A | 38(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. 2SK3219-01MR-VB Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 38mΩ @ VGS=10V
- **Drain current (ID)**: 45A
- **Technology**: Trench
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 38mΩ @ VGS=10V
- **Drain current (ID)**: 45A
- **Technology**: Trench
Domain and module applications：
3. Application fields and module examples
As a high-performance N-channel power MOSFET, 2SK3219-01MR-VB is widely used in the following fields and modules:
1. **Power management**:
- **DC-DC converter**: In high-efficiency DC-DC converters, the low on-resistance and high current carrying capacity of 2SK3219-01MR-VB can significantly improve conversion efficiency and reduce power loss.
- **AC-DC power adapter**: Its high voltage and high current characteristics make it very suitable for AC-DC power adapters to provide stable power conversion.
2. **Motor drive**:
- **Power tools**: In power tools, this MOSFET can provide strong and efficient current transmission to ensure smooth operation of the motor.
- **Electric vehicle drive**: Its high current carrying capacity and low on-resistance make it perform well in electric vehicle drives, which can effectively improve energy efficiency and performance.
3. **Consumer Electronics**:
- **TVs and Monitors**: In the switching power supply modules of TVs and monitors, the 2SK3219-01MR-VB can provide efficient power conversion to ensure the normal operation of the equipment.
- **Computer and Server Power**: The low on-resistance and high reliability of this MOSFET make it suitable for use in power management modules of computers and servers to improve system stability.
4. **Industrial Applications**:
- **Uninterruptible Power Supply (UPS)**: In UPS systems, the 2SK3219-01MR-VB can provide efficient power conversion when the power is interrupted to ensure continuous operation of the equipment.
- **Solar Inverters**: This MOSFET can be used in solar inverters to provide efficient energy conversion and optimize the utilization of solar energy.
With its excellent electrical performance and wide range of applications, the 2SK3219-01MR-VB is an ideal choice for a variety of high-performance power transmission and management systems.
As a high-performance N-channel power MOSFET, 2SK3219-01MR-VB is widely used in the following fields and modules:
1. **Power management**:
- **DC-DC converter**: In high-efficiency DC-DC converters, the low on-resistance and high current carrying capacity of 2SK3219-01MR-VB can significantly improve conversion efficiency and reduce power loss.
- **AC-DC power adapter**: Its high voltage and high current characteristics make it very suitable for AC-DC power adapters to provide stable power conversion.
2. **Motor drive**:
- **Power tools**: In power tools, this MOSFET can provide strong and efficient current transmission to ensure smooth operation of the motor.
- **Electric vehicle drive**: Its high current carrying capacity and low on-resistance make it perform well in electric vehicle drives, which can effectively improve energy efficiency and performance.
3. **Consumer Electronics**:
- **TVs and Monitors**: In the switching power supply modules of TVs and monitors, the 2SK3219-01MR-VB can provide efficient power conversion to ensure the normal operation of the equipment.
- **Computer and Server Power**: The low on-resistance and high reliability of this MOSFET make it suitable for use in power management modules of computers and servers to improve system stability.
4. **Industrial Applications**:
- **Uninterruptible Power Supply (UPS)**: In UPS systems, the 2SK3219-01MR-VB can provide efficient power conversion when the power is interrupted to ensure continuous operation of the equipment.
- **Solar Inverters**: This MOSFET can be used in solar inverters to provide efficient energy conversion and optimize the utilization of solar energy.
With its excellent electrical performance and wide range of applications, the 2SK3219-01MR-VB is an ideal choice for a variety of high-performance power transmission and management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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