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2SK3176-VB Product details
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2SK3176-VB MOSFET Product Introduction
2SK3176-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) packaged in TO3P. This type of MOSFET has the characteristics of high drain-source voltage, low on-resistance and high drain current, and is suitable for high power power management and switching applications.
2SK3176-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) packaged in TO3P. This type of MOSFET has the characteristics of high drain-source voltage, low on-resistance and high drain current, and is suitable for high power power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 200V | 4V | 96A | 13.8(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
2SK3176-VB Detailed parameter description
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 4V
- **On-resistance (RDS(ON))**: 13.8mΩ @ VGS = 10V
- **Drain current (ID)**: 96A
- **Technology type**: Trench
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 4V
- **On-resistance (RDS(ON))**: 13.8mΩ @ VGS = 10V
- **Drain current (ID)**: 96A
- **Technology type**: Trench
Domain and module applications：
Application examples of applicable fields and modules
2SK3176-VB MOSFET has the characteristics of high drain-source voltage, low on-resistance and high drain current, which is suitable for high-power applications. Here are some specific application fields and module examples:
1. **Power management system**: In high-power power management systems, this MOSFET can be used in switch mode power supplies (SMPS) and inverters to provide efficient and stable power conversion and management.
2. **Industrial motor drive**: In industrial motor drive systems, it is used to control high-power motors and provide stable and efficient drive and control.
3. **Electric vehicle charger**: In electric vehicle chargers, this MOSFET can be used for switching control of high-power chargers to provide efficient and stable charging capabilities.
4. **Power inverter**: In power inverters, this MOSFET can be used for switching control of high-power inverters to provide stable and efficient power inversion.
2SK3176-VB MOSFET has the characteristics of high drain-source voltage, low on-resistance and high drain current, which is suitable for high-power applications. Here are some specific application fields and module examples:
1. **Power management system**: In high-power power management systems, this MOSFET can be used in switch mode power supplies (SMPS) and inverters to provide efficient and stable power conversion and management.
2. **Industrial motor drive**: In industrial motor drive systems, it is used to control high-power motors and provide stable and efficient drive and control.
3. **Electric vehicle charger**: In electric vehicle chargers, this MOSFET can be used for switching control of high-power chargers to provide efficient and stable charging capabilities.
4. **Power inverter**: In power inverters, this MOSFET can be used for switching control of high-power inverters to provide stable and efficient power inversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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