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2SK3162-VB Product details
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1. 2SK3162-VB Product Introduction
2SK3162-VB is a single N-channel MOSFET in TO220F package, suitable for medium-high voltage and high current applications. The device has a drain-source voltage (VDS) of 200V and a continuous drain current (ID) of 45A, and has a low on-resistance (RDS(ON)) at different gate-source voltages. It uses Trench technology, has high efficiency, low on-resistance and fast switching characteristics, and is suitable for electronic applications requiring high power density and efficient energy management.
2SK3162-VB is a single N-channel MOSFET in TO220F package, suitable for medium-high voltage and high current applications. The device has a drain-source voltage (VDS) of 200V and a continuous drain current (ID) of 45A, and has a low on-resistance (RDS(ON)) at different gate-source voltages. It uses Trench technology, has high efficiency, low on-resistance and fast switching characteristics, and is suitable for electronic applications requiring high power density and efficient energy management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 45A | 38(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. 2SK3162-VB Detailed Parameter Description
| Parameter| Value| Unit| Remarks|
|---------------------|------------|-------|-------------------------|
| **Package Type** | TO220F | | |
| **Configuration** | Single N-Channel| | |
| **Drain-Source Voltage (VDS)** | 200 | V | Maximum Rating|
| **Gate-Source Voltage (VGS)** | 20（±） | V | Maximum Rating|
| **Threshold Voltage (Vth)** | 3 | V | Typical Value|
| **On-Resistance (RDS(ON))** | 38 | mΩ | When VGS=10V|
| **Continuous Drain Current (ID)** | 45 | A | Maximum Rating|
| **Technology** | Trench | | Trench technology, high performance and fast switching characteristics |
| Parameter| Value| Unit| Remarks|
|---------------------|------------|-------|-------------------------|
| **Package Type** | TO220F | | |
| **Configuration** | Single N-Channel| | |
| **Drain-Source Voltage (VDS)** | 200 | V | Maximum Rating|
| **Gate-Source Voltage (VGS)** | 20（±） | V | Maximum Rating|
| **Threshold Voltage (Vth)** | 3 | V | Typical Value|
| **On-Resistance (RDS(ON))** | 38 | mΩ | When VGS=10V|
| **Continuous Drain Current (ID)** | 45 | A | Maximum Rating|
| **Technology** | Trench | | Trench technology, high performance and fast switching characteristics |
Domain and module applications：
III. Applications and Examples
The 2SK3162-VB MOSFET is suitable for a variety of medium-high voltage and high current applications, including but not limited to the following areas:
1. **Electric Vehicles**: In the power system of electric vehicles, the 2SK3162-VB can be used for battery management and electric drive control. Its high current carrying capacity and high efficiency help improve the performance and range of electric vehicles.
2. **Power Converters**: In high-power converters, the 2SK3162-VB can be used to achieve efficient energy conversion. Its low on-resistance and high-frequency switching capability help improve the efficiency and power density of the converter.
3. **Industrial Power Supplies**: In high-power power supplies in the industrial field, the device can be used to achieve efficient energy conversion. Its low on-resistance and high current capability make it an ideal choice for industrial power conversion applications.
4. **Power Conditioner**: In power conditioners, the 2SK3162-VB can be used as the main switching element, where its high on-resistance and fast response performance help achieve stable and reliable power output.
In summary, the 2SK3162-VB MOSFET has high current capability, low on-resistance, and fast switching characteristics, making it suitable for medium and high voltage electronic applications that require high power density and efficient energy management.
The 2SK3162-VB MOSFET is suitable for a variety of medium-high voltage and high current applications, including but not limited to the following areas:
1. **Electric Vehicles**: In the power system of electric vehicles, the 2SK3162-VB can be used for battery management and electric drive control. Its high current carrying capacity and high efficiency help improve the performance and range of electric vehicles.
2. **Power Converters**: In high-power converters, the 2SK3162-VB can be used to achieve efficient energy conversion. Its low on-resistance and high-frequency switching capability help improve the efficiency and power density of the converter.
3. **Industrial Power Supplies**: In high-power power supplies in the industrial field, the device can be used to achieve efficient energy conversion. Its low on-resistance and high current capability make it an ideal choice for industrial power conversion applications.
4. **Power Conditioner**: In power conditioners, the 2SK3162-VB can be used as the main switching element, where its high on-resistance and fast response performance help achieve stable and reliable power output.
In summary, the 2SK3162-VB MOSFET has high current capability, low on-resistance, and fast switching characteristics, making it suitable for medium and high voltage electronic applications that require high power density and efficient energy management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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