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2SK3153-VB Product details
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2SK3153-VB MOSFET Product Introduction
2SK3153-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) packaged in TO220F. This type of MOSFET has the characteristics of high drain-source voltage, low on-resistance and high drain current, and is suitable for medium and high power power management and switching applications.
2SK3153-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) packaged in TO220F. This type of MOSFET has the characteristics of high drain-source voltage, low on-resistance and high drain current, and is suitable for medium and high power power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | 34(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2SK3153-VB Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 34mΩ @ VGS = 10V
- **Drain current (ID)**: 50A
- **Technology type**: Trench
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 34mΩ @ VGS = 10V
- **Drain current (ID)**: 50A
- **Technology type**: Trench
Domain and module applications：
Application examples of applicable fields and modules
2SK3153-VB MOSFET has the characteristics of high drain-source voltage, low on-resistance and high drain current, and is suitable for medium and high power applications. Here are some specific application fields and module examples:
1. **Power management system**: In medium and high power power management systems, this MOSFET can be used in switch mode power supplies (SMPS) and inverters to provide efficient and stable power conversion and management.
2. **Electric vehicles and hybrid vehicles**: In the electric drive system of electric vehicles and hybrid vehicles, this MOSFET can be used to control motors and battery management systems to ensure efficient energy utilization and conversion.
3. **Industrial automation**: In industrial automation equipment, it is used to drive medium and high power motors and control other high-voltage equipment to provide stable power and control signals.
4. **Power inverter**: In power inverters, this MOSFET can be used for switching control of high power inverters to provide stable and efficient power inversion.
2SK3153-VB MOSFET has the characteristics of high drain-source voltage, low on-resistance and high drain current, and is suitable for medium and high power applications. Here are some specific application fields and module examples:
1. **Power management system**: In medium and high power power management systems, this MOSFET can be used in switch mode power supplies (SMPS) and inverters to provide efficient and stable power conversion and management.
2. **Electric vehicles and hybrid vehicles**: In the electric drive system of electric vehicles and hybrid vehicles, this MOSFET can be used to control motors and battery management systems to ensure efficient energy utilization and conversion.
3. **Industrial automation**: In industrial automation equipment, it is used to drive medium and high power motors and control other high-voltage equipment to provide stable power and control signals.
4. **Power inverter**: In power inverters, this MOSFET can be used for switching control of high power inverters to provide stable and efficient power inversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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