中文
English
2SK3151-VB Product details
Back to previous pageProduct introduction：
1. 2SK3151-VB Product Introduction
2SK3151-VB is a single N-channel MOSFET in TO3P package, suitable for high voltage and high current applications. The device has a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 100A, and has very low on-resistance (RDS(ON)) at different gate-source voltages. It uses Trench technology, has high efficiency, low on-resistance and fast switching characteristics, and is suitable for electronic applications requiring high power density and efficient energy management.
2SK3151-VB is a single N-channel MOSFET in TO3P package, suitable for high voltage and high current applications. The device has a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 100A, and has very low on-resistance (RDS(ON)) at different gate-source voltages. It uses Trench technology, has high efficiency, low on-resistance and fast switching characteristics, and is suitable for electronic applications requiring high power density and efficient energy management.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 100V | 2.5V | 100A | 10(mΩ) | 9(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
2. 2SK3151-VB Detailed Parameter Description
| Parameter| Value| Unit| Remarks|
|---------------------|------------|-------|-------------------------|
| **Package Type** | TO3P | | |
| **Configuration** | Single N-channel| | |
| **Drain-Source Voltage (VDS)** | 100 | V | Maximum Rating|
| **Gate-Source Voltage (VGS)** | 20 (±) | V | Maximum Rating|
| **Threshold Voltage (Vth)** | 2.5 | V | Typical Value|
| **On-Resistance (RDS(ON))** | 10 | mΩ | When VGS=4.5V|
| **On-Resistance (RDS(ON))** | 9 | mΩ | When VGS=10V|
| **Continuous Drain Current (ID)** | 100 | A | Maximum Ratings|
| **Technology** | Trench | | Trench technology, high performance and fast switching characteristics|
| Parameter| Value| Unit| Remarks|
|---------------------|------------|-------|-------------------------|
| **Package Type** | TO3P | | |
| **Configuration** | Single N-channel| | |
| **Drain-Source Voltage (VDS)** | 100 | V | Maximum Rating|
| **Gate-Source Voltage (VGS)** | 20 (±) | V | Maximum Rating|
| **Threshold Voltage (Vth)** | 2.5 | V | Typical Value|
| **On-Resistance (RDS(ON))** | 10 | mΩ | When VGS=4.5V|
| **On-Resistance (RDS(ON))** | 9 | mΩ | When VGS=10V|
| **Continuous Drain Current (ID)** | 100 | A | Maximum Ratings|
| **Technology** | Trench | | Trench technology, high performance and fast switching characteristics|
Domain and module applications：
III. Applications and Examples
2SK3151-VB MOSFET is suitable for a variety of high voltage and high current applications, including but not limited to the following areas:
1. **Electric Vehicles**: In the power system of electric vehicles, 2SK3151-VB can be used for battery management and electric drive control. Its high current carrying capacity and high efficiency help improve the performance and range of electric vehicles.
2. **Industrial Power Supply**: In high power power supplies in the industrial field, this device can be used to achieve efficient energy conversion. Its low on-resistance and high current capability make it an ideal choice for industrial power conversion applications.
3. **Power Conditioner**: In power conditioners, 2SK3151-VB can be used as the main switching element, and its high on-resistance and fast response performance help achieve stable and reliable power output.
4. **High Performance Power Module**: In applications that require high performance power modules, 2SK3151-VB can be used to provide stable power output. Its high current capability and low on-resistance help improve the efficiency and reliability of the module.
Through these application examples, it can be seen that the 2SK3151-VB MOSFET has high current capability, low on-resistance and fast switching characteristics, which is suitable for high-voltage electronic applications that require high power density and efficient energy management.
2SK3151-VB MOSFET is suitable for a variety of high voltage and high current applications, including but not limited to the following areas:
1. **Electric Vehicles**: In the power system of electric vehicles, 2SK3151-VB can be used for battery management and electric drive control. Its high current carrying capacity and high efficiency help improve the performance and range of electric vehicles.
2. **Industrial Power Supply**: In high power power supplies in the industrial field, this device can be used to achieve efficient energy conversion. Its low on-resistance and high current capability make it an ideal choice for industrial power conversion applications.
3. **Power Conditioner**: In power conditioners, 2SK3151-VB can be used as the main switching element, and its high on-resistance and fast response performance help achieve stable and reliable power output.
4. **High Performance Power Module**: In applications that require high performance power modules, 2SK3151-VB can be used to provide stable power output. Its high current capability and low on-resistance help improve the efficiency and reliability of the module.
Through these application examples, it can be seen that the 2SK3151-VB MOSFET has high current capability, low on-resistance and fast switching characteristics, which is suitable for high-voltage electronic applications that require high power density and efficient energy management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
