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2SK3135L-VB Product details
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2SK3135L-VB MOSFET Product Introduction
2SK3135L-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) packaged in TO251. This type of MOSFET has the characteristics of low drain-source voltage, low on-resistance and high drain current, suitable for high power power management and switching applications.
2SK3135L-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) packaged in TO251. This type of MOSFET has the characteristics of low drain-source voltage, low on-resistance and high drain current, suitable for high power power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 2.5V | 97A | 6(mΩ) | 5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 2.5V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 2.5V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2SK3135L-VB Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 6mΩ @ VGS = 4.5V, 5mΩ @ VGS = 10V
- **Drain current (ID)**: 97A
- **Technology type**: Trench
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 6mΩ @ VGS = 4.5V, 5mΩ @ VGS = 10V
- **Drain current (ID)**: 97A
- **Technology type**: Trench
Domain and module applications：
Application examples of applicable fields and modules
2SK3135L-VB MOSFET has the characteristics of low drain-source voltage, low on-resistance and high drain current, which is suitable for high-power applications. Here are some specific application fields and module examples:
1. **Electric vehicles and hybrid vehicles**: In the electric drive system of electric vehicles and hybrid vehicles, this MOSFET can be used to control motors and battery management systems to ensure efficient energy utilization and conversion.
2. **Industrial automation**: In industrial automation equipment, it is used to drive high-power motors and control other high-voltage equipment to provide stable power and control signals.
3. **Power management system**: In high-power power management systems, this MOSFET can be used in switch mode power supplies (SMPS) and inverters to provide efficient and stable power conversion and management.
4. **LED lighting system**: In high-power LED lighting drivers, this MOSFET is used as a power switching device to provide efficient, stable power conversion and long-life working characteristics.
2SK3135L-VB MOSFET has the characteristics of low drain-source voltage, low on-resistance and high drain current, which is suitable for high-power applications. Here are some specific application fields and module examples:
1. **Electric vehicles and hybrid vehicles**: In the electric drive system of electric vehicles and hybrid vehicles, this MOSFET can be used to control motors and battery management systems to ensure efficient energy utilization and conversion.
2. **Industrial automation**: In industrial automation equipment, it is used to drive high-power motors and control other high-voltage equipment to provide stable power and control signals.
3. **Power management system**: In high-power power management systems, this MOSFET can be used in switch mode power supplies (SMPS) and inverters to provide efficient and stable power conversion and management.
4. **LED lighting system**: In high-power LED lighting drivers, this MOSFET is used as a power switching device to provide efficient, stable power conversion and long-life working characteristics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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