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2SK3133-VB Product details
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1. 2SK3133-VB Product Introduction
2SK3133-VB is a single N-channel MOSFET in TO252 package, suitable for medium-high voltage and high current applications. The device has a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 80A, and has very low on-resistance (RDS(ON)) at different gate-source voltages. It uses Trench technology, has high efficiency, low on-resistance and fast switching characteristics, and is suitable for electronic applications requiring efficient energy management and high power density.
2SK3133-VB is a single N-channel MOSFET in TO252 package, suitable for medium-high voltage and high current applications. The device has a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 80A, and has very low on-resistance (RDS(ON)) at different gate-source voltages. It uses Trench technology, has high efficiency, low on-resistance and fast switching characteristics, and is suitable for electronic applications requiring efficient energy management and high power density.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 6(mΩ) | 5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. 2SK3133-VB Detailed Parameter Description
| Parameter| Value| Unit| Remarks|
|---------------------|------------|-------|-------------------------|
| **Package Type** | TO252 | | |
| **Configuration** | Single N-channel| | |
| **Drain-Source Voltage (VDS)** | 30 | V | Maximum Rating|
| **Gate-Source Voltage (VGS)** | 20 (±) | V | Maximum Rating|
| **Threshold Voltage (Vth)** | 1.7 | V | Typical Value|
| **On-Resistance (RDS(ON))** | 6 | mΩ | When VGS=4.5V|
| **On-Resistance (RDS(ON))** | 5 | mΩ | When VGS=10V|
| **Continuous Drain Current (ID)** | 80 | A | Maximum Ratings|
| **Technology** | Trench | | Trench technology, high performance and fast switching characteristics|
| Parameter| Value| Unit| Remarks|
|---------------------|------------|-------|-------------------------|
| **Package Type** | TO252 | | |
| **Configuration** | Single N-channel| | |
| **Drain-Source Voltage (VDS)** | 30 | V | Maximum Rating|
| **Gate-Source Voltage (VGS)** | 20 (±) | V | Maximum Rating|
| **Threshold Voltage (Vth)** | 1.7 | V | Typical Value|
| **On-Resistance (RDS(ON))** | 6 | mΩ | When VGS=4.5V|
| **On-Resistance (RDS(ON))** | 5 | mΩ | When VGS=10V|
| **Continuous Drain Current (ID)** | 80 | A | Maximum Ratings|
| **Technology** | Trench | | Trench technology, high performance and fast switching characteristics|
Domain and module applications：
III. Applications and Examples
2SK3133-VB MOSFET is suitable for a variety of medium-high voltage and high current applications, including but not limited to the following:
1. **Power Tools**: In power tools, 2SK3133-VB can be used to drive and control electric motors. Its high current capability and low on-resistance help improve the performance and efficiency of power tools.
2. **Power Management**: In medium-high voltage power management, the device can be used for voltage regulation and power control. Its low on-resistance and high drain current make it an ideal choice for medium-high voltage power management.
3. **Electric Vehicles**: In the power system of electric vehicles, 2SK3133-VB can be used for battery management and electric motor control. Its high current carrying capacity and high efficiency help improve the performance and range of electric vehicles.
4. **Power Converters**: In high power converters, 2SK3133-VB can be used to achieve efficient energy conversion. Its low on-resistance and high-frequency switching capability help improve the efficiency and power density of the converter.
In summary, the 2SK3133-VB MOSFET has high current capability, low on-resistance and fast switching characteristics, making it suitable for medium and high voltage electronic applications that require high power density and efficient energy management.
2SK3133-VB MOSFET is suitable for a variety of medium-high voltage and high current applications, including but not limited to the following:
1. **Power Tools**: In power tools, 2SK3133-VB can be used to drive and control electric motors. Its high current capability and low on-resistance help improve the performance and efficiency of power tools.
2. **Power Management**: In medium-high voltage power management, the device can be used for voltage regulation and power control. Its low on-resistance and high drain current make it an ideal choice for medium-high voltage power management.
3. **Electric Vehicles**: In the power system of electric vehicles, 2SK3133-VB can be used for battery management and electric motor control. Its high current carrying capacity and high efficiency help improve the performance and range of electric vehicles.
4. **Power Converters**: In high power converters, 2SK3133-VB can be used to achieve efficient energy conversion. Its low on-resistance and high-frequency switching capability help improve the efficiency and power density of the converter.
In summary, the 2SK3133-VB MOSFET has high current capability, low on-resistance and fast switching characteristics, making it suitable for medium and high voltage electronic applications that require high power density and efficient energy management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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