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2SK3132-VB Product details
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1. 2SK3132-VB Product Introduction
2SK3132-VB is a single N-channel MOSFET produced by VBsemi, using TO3P package. This MOSFET has a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of 30V, suitable for medium and high voltage applications. Its threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 60mΩ @ VGS=10V, and the drain current (ID) is 47A. Using SJ_Multi-EPI technology, 2SK3132-VB shows high reliability and stability in a variety of applications, especially suitable for occasions requiring high current and high voltage.
2SK3132-VB is a single N-channel MOSFET produced by VBsemi, using TO3P package. This MOSFET has a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of 30V, suitable for medium and high voltage applications. Its threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 60mΩ @ VGS=10V, and the drain current (ID) is 47A. Using SJ_Multi-EPI technology, 2SK3132-VB shows high reliability and stability in a variety of applications, especially suitable for occasions requiring high current and high voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | 60(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
2. 2SK3132-VB Detailed parameter description
- **Package form**: TO3P
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: 30V (±)
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 60mΩ @ VGS=10V
- **Drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
- **Other parameters**:
- Gate charge (Qg): To be determined
- Reverse recovery time (trr): To be determined
- Inductive load switching time (tsw): To be determined
- Package size: To be determined
- Operating temperature range: To be determined
- **Package form**: TO3P
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: 30V (±)
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 60mΩ @ VGS=10V
- **Drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
- **Other parameters**:
- Gate charge (Qg): To be determined
- Reverse recovery time (trr): To be determined
- Inductive load switching time (tsw): To be determined
- Package size: To be determined
- Operating temperature range: To be determined
Domain and module applications：
III. Application fields and module examples
2SK3132-VB MOSFET is suitable for the following fields and modules due to its high voltage and high current capabilities:
1. **Industrial power supply**: In industrial power supply systems that require high voltage and high current, 2SK3132-VB can be used as a power switch to control the output and stability of the power supply to ensure the normal operation of the equipment.
2. **Electric vehicles**: In the electric system of electric vehicles, 2SK3132-VB can be used as a switching element of the driver to control the start and stop and speed of the motor to improve the performance and efficiency of the car.
3. **Solar inverter**: In solar inverters, 2SK3132-VB can be used as the switch of the inverter to control the output of the solar panel, converting DC power into AC power to supply power to home and industrial equipment.
In general, 2SK3132-VB is an N-channel MOSFET suitable for high voltage and high current applications. It has high reliability and stability, and can meet the needs of various electronic equipment for high voltage switching and control.
2SK3132-VB MOSFET is suitable for the following fields and modules due to its high voltage and high current capabilities:
1. **Industrial power supply**: In industrial power supply systems that require high voltage and high current, 2SK3132-VB can be used as a power switch to control the output and stability of the power supply to ensure the normal operation of the equipment.
2. **Electric vehicles**: In the electric system of electric vehicles, 2SK3132-VB can be used as a switching element of the driver to control the start and stop and speed of the motor to improve the performance and efficiency of the car.
3. **Solar inverter**: In solar inverters, 2SK3132-VB can be used as the switch of the inverter to control the output of the solar panel, converting DC power into AC power to supply power to home and industrial equipment.
In general, 2SK3132-VB is an N-channel MOSFET suitable for high voltage and high current applications. It has high reliability and stability, and can meet the needs of various electronic equipment for high voltage switching and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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