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2SK3131-VB Product details
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Product Introduction
**Model: 2SK3131-VB**
**Package: TO3P**
**Configuration: Single N-channel**
**Technology: SJ Polycrystalline EPI**
2SK3131-VB is a high-performance N-channel MOSFET in TO3P package for high voltage and high current applications. Its 600V drain-source voltage (VDS) and 47A drain current (ID) enable it to excel in circuits requiring high voltage and high current output. 60mΩ on-resistance (RDS(ON)) @ VGS=10V ensures low power consumption and high efficiency.
**Model: 2SK3131-VB**
**Package: TO3P**
**Configuration: Single N-channel**
**Technology: SJ Polycrystalline EPI**
2SK3131-VB is a high-performance N-channel MOSFET in TO3P package for high voltage and high current applications. Its 600V drain-source voltage (VDS) and 47A drain current (ID) enable it to excel in circuits requiring high voltage and high current output. 60mΩ on-resistance (RDS(ON)) @ VGS=10V ensures low power consumption and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | 60(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Turning threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 60mΩ @ VGS=10V
- **Drain current (ID)**: 47A
- **Technology type**: SJ polycrystalline EPI
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Turning threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 60mΩ @ VGS=10V
- **Drain current (ID)**: 47A
- **Technology type**: SJ polycrystalline EPI
- **Package type**: TO3P
- **Configuration**: Single N-channel
Domain and module applications：
Applications and module examples
The high performance characteristics of 2SK3131-VB make it suitable for a variety of applications:
1. **High-voltage power supply**: This MOSFET can be used for switching and controlling high-voltage power supplies, such as high-voltage switching power supplies (HVPS) and high-voltage regulators.
2. **Electric vehicle charging pile**: Due to its high-voltage and high-current characteristics, this MOSFET can be used in electric vehicle charging piles to provide efficient power conversion and current output.
3. **Industrial control**: In industrial control systems that require high voltage and high current output, this MOSFET can be used for power management and drive circuits.
4. **Medical equipment**: In medical equipment, 2SK3131-VB can be used for high-voltage power supplies and drive circuits to ensure efficient operation of the equipment.
5. **Laser driver**: Due to its high-voltage and high-current characteristics, this MOSFET can be used in laser drive circuits to provide stable current output and efficient energy management.
The excellent electrical characteristics and reliability design of 2SK3131-VB make it an ideal choice for high-voltage and high-current applications, and can meet the requirements of high-performance MOSFETs in various fields.
The high performance characteristics of 2SK3131-VB make it suitable for a variety of applications:
1. **High-voltage power supply**: This MOSFET can be used for switching and controlling high-voltage power supplies, such as high-voltage switching power supplies (HVPS) and high-voltage regulators.
2. **Electric vehicle charging pile**: Due to its high-voltage and high-current characteristics, this MOSFET can be used in electric vehicle charging piles to provide efficient power conversion and current output.
3. **Industrial control**: In industrial control systems that require high voltage and high current output, this MOSFET can be used for power management and drive circuits.
4. **Medical equipment**: In medical equipment, 2SK3131-VB can be used for high-voltage power supplies and drive circuits to ensure efficient operation of the equipment.
5. **Laser driver**: Due to its high-voltage and high-current characteristics, this MOSFET can be used in laser drive circuits to provide stable current output and efficient energy management.
The excellent electrical characteristics and reliability design of 2SK3131-VB make it an ideal choice for high-voltage and high-current applications, and can meet the requirements of high-performance MOSFETs in various fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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