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2SK3113B-S15-VB Product details
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1. 2SK3113B-S15-VB Product Introduction
2SK3113B-S15-VB is a single N-channel MOSFET produced by VBsemi and uses a TO251 package. This MOSFET has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of 30V, suitable for medium and high voltage applications. Its threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 4300mΩ @ VGS=10V, and the drain current (ID) is 2A. Using planar technology, the 2SK3113B-S15-VB exhibits high reliability and stability in a variety of applications, and is particularly suitable for applications with low current requirements but higher voltages.
2SK3113B-S15-VB is a single N-channel MOSFET produced by VBsemi and uses a TO251 package. This MOSFET has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of 30V, suitable for medium and high voltage applications. Its threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 4300mΩ @ VGS=10V, and the drain current (ID) is 2A. Using planar technology, the 2SK3113B-S15-VB exhibits high reliability and stability in a variety of applications, and is particularly suitable for applications with low current requirements but higher voltages.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300(mΩ) | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. 2SK3113B-S15-VB Detailed parameter description
- **Package form**: TO251
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: 30V (±)
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ @ VGS=10V
- **Drain current (ID)**: 2A
- **Technology**: Planar technology
- **Other parameters**:
- Gate charge (Qg): To be determined
- Reverse recovery time (trr): To be determined
- Inductive load switching time (tsw): To be determined
- Package size: To be determined
- Operating temperature range: To be determined
- **Package form**: TO251
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: 30V (±)
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ @ VGS=10V
- **Drain current (ID)**: 2A
- **Technology**: Planar technology
- **Other parameters**:
- Gate charge (Qg): To be determined
- Reverse recovery time (trr): To be determined
- Inductive load switching time (tsw): To be determined
- Package size: To be determined
- Operating temperature range: To be determined
Domain and module applications：
3. Application fields and module examples
2SK3113B-S15-VB MOSFET is suitable for the following fields and modules due to its high voltage and low current capabilities:
1. **LED lighting driver**: In LED lighting systems, 2SK3113B-S15-VB can be used as a switching element of the LED driver to control the switching and dimming of LED lights to ensure the efficiency and stability of the system.
2. **High-voltage sensor**: In sensor modules that require high-voltage operation, 2SK3113B-S15-VB can provide the necessary voltage control and switching functions to ensure the normal operation of the sensor and data accuracy.
3. **Medium and high voltage power management**: In power management systems, this MOSFET can be used as a high-voltage switch to control the distribution and output of power to ensure the stability and efficiency of the system.
4. **Household appliances**: In some high-voltage and low-current household appliances, such as microwave ovens and washing machine control circuits, 2SK3113B-S15-VB can provide reliable high-voltage control to ensure the safety and performance of household appliances.
In general, 2SK3113B-S15-VB is an N-channel MOSFET suitable for medium and high voltage applications. It has high reliability and stability and can meet the needs of a variety of electronic devices for high-voltage switching and control.
2SK3113B-S15-VB MOSFET is suitable for the following fields and modules due to its high voltage and low current capabilities:
1. **LED lighting driver**: In LED lighting systems, 2SK3113B-S15-VB can be used as a switching element of the LED driver to control the switching and dimming of LED lights to ensure the efficiency and stability of the system.
2. **High-voltage sensor**: In sensor modules that require high-voltage operation, 2SK3113B-S15-VB can provide the necessary voltage control and switching functions to ensure the normal operation of the sensor and data accuracy.
3. **Medium and high voltage power management**: In power management systems, this MOSFET can be used as a high-voltage switch to control the distribution and output of power to ensure the stability and efficiency of the system.
4. **Household appliances**: In some high-voltage and low-current household appliances, such as microwave ovens and washing machine control circuits, 2SK3113B-S15-VB can provide reliable high-voltage control to ensure the safety and performance of household appliances.
In general, 2SK3113B-S15-VB is an N-channel MOSFET suitable for medium and high voltage applications. It has high reliability and stability and can meet the needs of a variety of electronic devices for high-voltage switching and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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