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2SK3076L-VB Product details
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2SK3076L-VB MOSFET Product Introduction
2SK3076L-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) packaged in TO252. This type of MOSFET has the characteristics of high drain-source voltage and moderate on-resistance, suitable for medium power power management and switching applications.
2SK3076L-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) packaged in TO252. This type of MOSFET has the characteristics of high drain-source voltage and moderate on-resistance, suitable for medium power power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2SK3076L-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS = 10V
- **Drain current (ID)**: 7A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS = 10V
- **Drain current (ID)**: 7A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Application examples of applicable fields and modules
2SK3076L-VB MOSFET has the characteristics of high drain-source voltage and moderate on-resistance, which is suitable for medium power applications. Here are some specific application fields and module examples:
1. **Power management system**: In medium power power management systems, this MOSFET can be used in switch mode power supplies (SMPS) and inverters to provide stable and efficient power conversion and management.
2. **Electric vehicle charger**: In electric vehicle chargers, this MOSFET can be used as a power switching device to achieve fast and efficient charging.
3. **Industrial automation**: In industrial automation equipment, it is used to control medium power motors and other electrical equipment to provide stable power supply and control signals.
4. **LED lighting system**: In medium power LED lighting drive circuits, this MOSFET is used as a switching device to provide efficient power conversion and long life working characteristics.
2SK3076L-VB MOSFET has the characteristics of high drain-source voltage and moderate on-resistance, which is suitable for medium power applications. Here are some specific application fields and module examples:
1. **Power management system**: In medium power power management systems, this MOSFET can be used in switch mode power supplies (SMPS) and inverters to provide stable and efficient power conversion and management.
2. **Electric vehicle charger**: In electric vehicle chargers, this MOSFET can be used as a power switching device to achieve fast and efficient charging.
3. **Industrial automation**: In industrial automation equipment, it is used to control medium power motors and other electrical equipment to provide stable power supply and control signals.
4. **LED lighting system**: In medium power LED lighting drive circuits, this MOSFET is used as a switching device to provide efficient power conversion and long life working characteristics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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