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2SK2991-VB Product details
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1. 2SK2991-VB Product Introduction
2SK2991-VB is a single N-channel MOSFET produced by VBsemi, using TO220F package. With a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of 30V, this MOSFET can provide reliable performance in medium and high voltage applications. The product adopts planar technology to ensure stability and durability in different applications. Its maximum drain current (ID) is 7A, and the on-resistance (RDS(ON)) is 1100mΩ at VGS of 10V. This device is suitable for medium and high voltage requirements and medium currents.
2SK2991-VB is a single N-channel MOSFET produced by VBsemi, using TO220F package. With a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of 30V, this MOSFET can provide reliable performance in medium and high voltage applications. The product adopts planar technology to ensure stability and durability in different applications. Its maximum drain current (ID) is 7A, and the on-resistance (RDS(ON)) is 1100mΩ at VGS of 10V. This device is suitable for medium and high voltage requirements and medium currents.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100(mΩ) | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. 2SK2991-VB Detailed parameter description
- **Package form**: TO220F
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: 30V (±)
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology**: Planar technology
- **Other parameters**:
- Gate charge (Qg): To be determined
- Reverse recovery time (trr): To be determined
- Inductive load switching time (tsw): To be determined
- Package size: To be determined
- Operating temperature range: To be determined
- **Package form**: TO220F
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: 30V (±)
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology**: Planar technology
- **Other parameters**:
- Gate charge (Qg): To be determined
- Reverse recovery time (trr): To be determined
- Inductive load switching time (tsw): To be determined
- Package size: To be determined
- Operating temperature range: To be determined
Domain and module applications：
3. Application fields and module examples
2SK2991-VB MOSFET is suitable for various medium and high voltage scenarios due to its medium high voltage and medium current capabilities. Here are some specific application fields and modules:
1. **Power module**: In power modules that require medium and high voltage output, 2SK2991-VB can provide reliable power switching and current control, so that the power module has better efficiency and reliability.
2. **Electric vehicle charging pile**: In medium and high voltage electric vehicle charging piles, the high voltage handling capability and stable power output of 2SK2991-VB can improve the charging efficiency and stability of the charging pile.
3. **Industrial control system**: In industrial control systems that require high voltage switching and current control, 2SK2991-VB can provide reliable power output and current regulation to ensure stable operation and high efficiency conversion of equipment.
In general, 2SK2991-VB is an N-channel MOSFET suitable for medium and high voltage applications. It has high performance and stability and can meet the needs of various high-power electronic devices.
2SK2991-VB MOSFET is suitable for various medium and high voltage scenarios due to its medium high voltage and medium current capabilities. Here are some specific application fields and modules:
1. **Power module**: In power modules that require medium and high voltage output, 2SK2991-VB can provide reliable power switching and current control, so that the power module has better efficiency and reliability.
2. **Electric vehicle charging pile**: In medium and high voltage electric vehicle charging piles, the high voltage handling capability and stable power output of 2SK2991-VB can improve the charging efficiency and stability of the charging pile.
3. **Industrial control system**: In industrial control systems that require high voltage switching and current control, 2SK2991-VB can provide reliable power output and current regulation to ensure stable operation and high efficiency conversion of equipment.
In general, 2SK2991-VB is an N-channel MOSFET suitable for medium and high voltage applications. It has high performance and stability and can meet the needs of various high-power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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