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2SK2955-VB Product details
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1. 2SK2955-VB Product Introduction
2SK2955-VB is a single N-channel MOSFET produced by VBsemi and uses a TO3P package. With a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of 20V, this MOSFET can provide high efficiency and reliable performance in low-voltage applications. The product adopts trench technology to ensure stability and durability in different applications. Its maximum drain current (ID) is 210A, and the on-resistance (RDS(ON)) is 3.6mΩ at a VGS of 4.5V and 3mΩ at a VGS of 10V. This device is suitable for applications with low voltage requirements and extremely high currents.
2SK2955-VB is a single N-channel MOSFET produced by VBsemi and uses a TO3P package. With a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of 20V, this MOSFET can provide high efficiency and reliable performance in low-voltage applications. The product adopts trench technology to ensure stability and durability in different applications. Its maximum drain current (ID) is 210A, and the on-resistance (RDS(ON)) is 3.6mΩ at a VGS of 4.5V and 3mΩ at a VGS of 10V. This device is suitable for applications with low voltage requirements and extremely high currents.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 3V | 210A | 3.6(mΩ) | 3(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
2. 2SK2955-VB Detailed parameter description
- **Package form**: TO3P
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: 20V (±)
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @ VGS=4.5V: 3.6mΩ
- @ VGS=10V: 3mΩ
- **Drain current (ID)**: 210A
- **Technology**: Trench technology
- **Other parameters**:
- Gate charge (Qg): To be determined
- Reverse recovery time (trr): To be determined
- Inductive load switching time (tsw): To be determined
- Package size: To be determined
- Operating temperature range: To be determined
- **Package form**: TO3P
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: 20V (±)
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @ VGS=4.5V: 3.6mΩ
- @ VGS=10V: 3mΩ
- **Drain current (ID)**: 210A
- **Technology**: Trench technology
- **Other parameters**:
- Gate charge (Qg): To be determined
- Reverse recovery time (trr): To be determined
- Inductive load switching time (tsw): To be determined
- Package size: To be determined
- Operating temperature range: To be determined
Domain and module applications：
3. Application fields and module examples
2SK2955-VB MOSFET is suitable for various low-voltage and high-power scenarios due to its low voltage and extremely high current capability. Here are some specific application fields and modules:
1. **Power module**: In low-voltage power modules that require extremely high current output, 2SK2955-VB can provide reliable power switching and current control, making the power module have better efficiency and reliability.
2. **Motor driver**: In low-voltage and extremely high-power motor control systems, 2SK2955-VB can provide efficient current control and voltage regulation to ensure stable operation and high-efficiency conversion of the motor.
3. **Electric vehicle controller**: In low-voltage and extremely high-power electric vehicle control systems, the high current handling capability and stable power output of 2SK2955-VB can improve the performance and driving efficiency of electric vehicles.
4. **Industrial electrical equipment**: In industrial electrical equipment that requires high-power switching and current control, 2SK2955-VB can provide reliable power output and current regulation to ensure stable operation and high-efficiency conversion of the equipment.
In general, 2SK2955-VB is an N-channel MOSFET suitable for low-voltage and high-power applications. It has extremely high performance and stability and can meet the needs of various high-power electronic equipment.
2SK2955-VB MOSFET is suitable for various low-voltage and high-power scenarios due to its low voltage and extremely high current capability. Here are some specific application fields and modules:
1. **Power module**: In low-voltage power modules that require extremely high current output, 2SK2955-VB can provide reliable power switching and current control, making the power module have better efficiency and reliability.
2. **Motor driver**: In low-voltage and extremely high-power motor control systems, 2SK2955-VB can provide efficient current control and voltage regulation to ensure stable operation and high-efficiency conversion of the motor.
3. **Electric vehicle controller**: In low-voltage and extremely high-power electric vehicle control systems, the high current handling capability and stable power output of 2SK2955-VB can improve the performance and driving efficiency of electric vehicles.
4. **Industrial electrical equipment**: In industrial electrical equipment that requires high-power switching and current control, 2SK2955-VB can provide reliable power output and current regulation to ensure stable operation and high-efficiency conversion of the equipment.
In general, 2SK2955-VB is an N-channel MOSFET suitable for low-voltage and high-power applications. It has extremely high performance and stability and can meet the needs of various high-power electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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