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2SK2925-VB Product details

Product introduction:

1. 2SK2925-VB Product Introduction

2SK2925-VB is a single N-channel MOSFET produced by VBsemi, using TO252 package. With a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of 20V, this MOSFET can provide high efficiency and reliable performance in low-voltage applications. The product adopts trench technology to ensure stability and durability in different applications. Its maximum drain current (ID) is 18A, and the on-resistance (RDS(ON)) is 85mΩ at VGS of 4.5V and 73mΩ at VGS of 10V. This device is suitable for applications with low voltage requirements and medium current.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 60V 1.7V 18A 85(mΩ) 73(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 60V 1.7V 18A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 60V 1.7V 18A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
2. 2SK2925-VB Detailed parameter description

- **Package form**: TO252
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: 20V (±)
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- @ VGS=4.5V: 85mΩ
- @ VGS=10V: 73mΩ
- **Drain current (ID)**: 18A
- **Technology**: Trench technology
- **Other parameters**:
- Gate charge (Qg): To be determined
- Reverse recovery time (trr): To be determined
- Inductive load switching time (tsw): To be determined
- Package size: To be determined
- Operating temperature range: To be determined

Domain and module applications:

3. Application fields and module examples

2SK2925-VB MOSFET is suitable for various low-voltage and high-power scenarios due to its low voltage and medium current capabilities. Here are some specific application fields and modules:

1. **Power module**: In power modules that require medium voltage and medium current, 2SK2925-VB can provide reliable power switching and current control, so that the power module has better efficiency and reliability.

2. **Motor drive**: In low-voltage and high-power motor control systems, 2SK2925-VB can provide efficient current control and voltage regulation to ensure stable operation and high-efficiency conversion of the motor.

3. **LED lighting system**: For LED lighting systems that require low voltage and high power, 2SK2925-VB can provide stable current and voltage output to improve lighting effects and energy utilization.

4. **Battery Management System**: In battery management systems that require high current charging and discharging, 2SK2925-VB can provide stable current control and voltage regulation to ensure safe operation and long life of the battery system.

In general, 2SK2925-VB is an N-channel MOSFET suitable for low-voltage and high-power applications. It has high performance and stability and can meet the needs of various high-power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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