VBM2124N Product details
Product introduction:
Product Introduction
The VBM2124N is a high-performance P-channel MOSFET designed for high voltage and high current applications. The MOSFET is packaged in TO220, single P-channel configuration, with a drain-source voltage (VDS) of -120V and a gate-source voltage (VGS) of ±20V. The device has a threshold voltage (Vth) of -2.7V, an RDS(ON) of 38mΩ (VGS = 10V), and a maximum continuous drain current (ID) of -40A. Using Trench technology, the VBM2124N provides excellent switching performance and efficient power management capabilities.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-P | -120V | 20V(±V) | -2.7V | -40A | 38(mΩ) | Trench |
- **Package:** TO220
- **Configuration:** Single P-channel
- **Drain-source voltage (VDS):** -120V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -2.7V
- **On-resistance (RDS(ON)):** 38mΩ @ VGS = 10V
- **Continuous leakage current (ID):** -40A
- **Technology:** Trench
Domain and module applications:
1. **Power Management:**
VBM2124N is ideal for high voltage power management systems, including power switches and power converters. Its high withstand voltage and low on-resistance enable it to efficiently control power switches, improving overall power efficiency and reliability.
2. **Electric Vehicles:**
In electric vehicles, VBM2124N can be used in battery management systems (BMS) and motor drive circuits. Its high current handling capability and low on-resistance ensure stable operation of the battery and motor, improving the energy efficiency and reliability of the system.
3. **Motor Drive:**
In motor drive applications, VBM2124N can be used to control and drive motors. Its high current capability and low on-resistance ensure efficient operation of the motor, suitable for industrial and household motor control systems.
4. **High-voltage switch: **
In applications that require high-voltage switches, such as inverters and high-voltage power modules, the VBM2124N is able to efficiently switch load states. Its high-voltage and high-current capabilities ensure reliability and stability in high-voltage environments.
Overall, the VBM2124N MOSFET is a high-performance P-channel component suitable for a variety of high-voltage and high-current applications, providing efficient power management and stable switching performance.
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